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onsemi Silicon Junction Switching Diode 1 A, 1 kV DO-41 Package MUR1100EG
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 2.7mm |
| Brand | onsemi |
| Height | 5.2mm |
| Length | 5.2mm |
| Model | MUR1100EG |
| Width | 2.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-41 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 35A |
| Maximum Forward Voltage Vf | 1.75V |
| Peak Reverse Recovery Time trr | 100ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 1kV |
Key Features
- High maximum forward current rating of 1 ampere.
- Encapsulated in compact DO-41 through-hole package with 2 pins.
- Peak reverse recovery time of 100 nanoseconds ensuring fast switching.
- Maximum peak reverse repetitive voltage up to 1 kiloVolt.
- Operating temperature range from -65°C to 175°C for reliability.
- Maximum forward voltage drop of 1.75 volts for efficient conduction.
- Can withstand high peak non-repetitive forward surge current up to 35 amperes.
- Silicon junction diode suitable for rectification and switching applications.
Product Description
onsemi MUR1100EG Silicon Junction Switching Diode is a high-performance diode designed for electronic circuits requiring fast switching and high reliability. It supports a maximum forward current of 1 ampere and can tolerate peak reverse voltages up to 1 kilovolt, making it suitable for a wide range of power rectification and switching tasks in industrial and consumer electronics.
The diode is housed in a DO-41 through-hole package featuring 2 pins for easy PCB mounting. It offers a peak reverse recovery time of 100 nanoseconds, enabling efficient switching in high-frequency circuits. The maximum forward voltage drop is 1.75 volts, allowing efficient current flow with minimal power loss.
This device operates reliably across a wide temperature range from -65°C to 175°C, making it suitable for demanding environments. It can also endure peak non-repetitive forward surge currents of up to 35 amperes, enhancing its robustness during transient conditions.
Physical dimensions include a length of 5.2 millimeters, diameter and width of 2.7 millimeters, providing a compact footprint for circuit design. As a silicon junction diode, it is ideal for rectifier circuits and switching applications across industrial, automotive non-AEC-Q101, and commercial electronic devices.
The onsemi MUR1100EG does not conform to automotive standards or special approvals, targeting general-purpose semiconductor applications. It is a new product manufactured in India, suited for use in electronics manufacturing, prototyping, and repair.
High maximum forward current rating of 1 ampere. Compact DO-41 through-hole package. Fast peak reverse recovery time: 100 ns. 1 kV maximum peak reverse repetitive voltage. Wide operating temperature range: -65°C to 175°C.
Maximum forward voltage of 1.75 V. Peak surge current rating of 35 A. Small physical dimensions (5.2mm length, 2.7mm diameter). Suitable for rectification and switching applications. Through-hole mounting configuration with 2 pins.
Explore more Switching Diodes and discrete semiconductors in the Electronics & Electricals category at EnvMart for diverse industrial and commercial electronic requirements.
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Frequently Asked Questions
The MUR1100EG has a maximum forward current rating of 1 ampere.
It features a peak reverse recovery time of 100 nanoseconds, enabling efficient switching in high-frequency applications.
This diode can tolerate a maximum peak reverse repetitive voltage of up to 1 kilovolt.
It operates reliably across a wide temperature range from -65°C to 175°C.
The physical dimensions include a length of 5.2 millimeters and a diameter of 2.7 millimeters.
The MUR1100EG is housed in a DO-41 through-hole package with 2 pins for easy PCB mounting.
The maximum forward voltage drop is 1.75 volts, allowing efficient conduction.
It can withstand a peak non-repetitive forward surge current of up to 35 amperes.
This silicon junction diode is suitable for rectification and switching applications in industrial and consumer electronics.
The MUR1100EG features a through-hole mounting configuration, making it easy to integrate into circuits.
This diode is manufactured in India.
It uses a single diode configuration, making it suitable for various electronic applications.
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