STMicroelectronics MDmesh N-Channel MOSFET 10 A 600 V Enhancement 3-Pin TO-220 STF10NM60N

STMicroelectronics STF10NM60N is a high-quality N-Channel MDmesh MOSFET designed for applications requiring efficient power switching and control. This device operates at a maximum continuous drain current of 10 A and withstands drain-source voltages up to 600 V, making it suitable for power management in industrial and electronic circuits.

The MOSFET features an enhancement mode channel, packaged in a TO-220 form factor with three pins for ease of integration into through-hole PCB designs. It exhibits a low typical gate charge of 19 nC, enabling rapid switching and improved efficiency in power circuits.

With a maximum power dissipation of 25 W and a wide operating temperature range between -55°C and 150°C, this semiconductor component ensures durable performance in demanding environments including industrial automation, power supplies, and motor control systems.

Its compact size (10.4 mm length, 4.6 mm width, 16.4 mm height) facilitates use in space-constrained electronic assemblies. While lacking automotive certifications, it is a reliable choice for general-purpose power MOSFET applications.

Maximum continuous drain current 10 A. Drain-source voltage 600 V. Enhancement mode N-Channel type. TO-220 package with through-hole mounting. Gate charge 19 nC for efficient switching. Power dissipation rating of 25 W. Operating temperature from -55°C to 150°C.

Compact construction suitable for various electronics. Ideal for industrial, electronic, and power management use cases, the STF10NM60N MOSFET combines robust performance with efficient switching characteristics. Explore more quality semiconductor components and MOSFETs on EnvMart for your design and manufacturing needs.