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STMicroelectronics MDmesh N-Channel MOSFET, 2.5 A, 1.5 kV, Enhancement Mode, 3-Pin TO-220 STP3N150
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP3N150 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.5A |
| Maximum Drain Source Voltage Vds | 1.5kV |
| Maximum Drain Source Resistance Rds | 9Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 29.3nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- High voltage MOSFET suitable for power switching applications.
- Enhancement channel mode for controlled conduction.
- Robust TO-220 package with 3 pins for through-hole mounting.
- Maximum power dissipation of 140 W supporting high load conditions.
- Wide operating temperature range from -55°C to 150°C.
- Typical gate charge of 29.3 nC ensuring efficient switching.
- Low maximum drain-source resistance of 9 ohms for reduced conduction losses.
- Maximum gate-source voltage rating at ±30 V for reliable operation.
Product Description
STMicroelectronics STP3N150 is a high-performance MDmesh N-Channel MOSFET designed for power control and switching in industrial and electronic applications. Featuring a maximum continuous drain current of 2.5 A and a high drain-source voltage rating of 1.5 kV, it efficiently handles demanding loads while maintaining thermal stability.
The enhancement mode channel provides precise control over conduction, with a maximum drain-source resistance of 9 ohms to optimize energy efficiency. Packaged in a 3-pin TO-220 configuration, this device is ideal for through-hole mounting on PCBs and integrates easily into power management setups.
The MOSFET supports a maximum power dissipation of 140 W and can reliably operate under temperatures ranging from -55°C to 150°C, suitable for harsh industrial environments. Its typical gate charge of 29.3 nC facilitates fast and efficient switching, while the maximum gate-source voltage of ±30 V offers robust protection against voltage spikes.
Compact physical dimensions of 15.75 mm height, 10.4 mm length, and 4.6 mm width enable space-efficient PCB designs. These characteristics make the STP3N150 an excellent choice for power electronics in industrial controls, manufacturing equipment, and automotive electronics applications where high voltage and reliable switching are critical.
High voltage N-Channel MOSFET for power switching. TO-220 package with 3 pins ensures sturdy mounting. Wide operating temperature range from -55°C to 150°C. Low drain-source resistance reduces energy loss. Support for maximum power dissipation of 140 W.
Efficient switching with typical gate charge of 29.3 nC. Maximum gate-source voltage rating of ±30 V provides durability. Compact size for optimized circuit layouts.
This STMicroelectronics MOSFET is widely used across electronic, industrial, and manufacturing sectors to enable reliable and efficient power control. Explore more MOSFET devices in EnvMart to find components best suited for your engineering and production needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.5 A.
It has a maximum drain-source voltage rating of 1.5 kV.
The typical gate charge is 29.3 nC, which aids in efficient switching.
The STP3N150 is packaged in a TO-220 configuration with 3 pins.
It supports a maximum power dissipation of 140 W.
The dimensions are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.
The operating temperature range is from -55°C to 150°C.
The maximum gate-source voltage rating is ±30 V.
This model supports through-hole mounting.
The maximum drain-source resistance is 9 ohms.
It operates in enhancement mode for controlled conduction.
The country of origin for this model is India.
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