onsemi 1.2 A NPN Bipolar Transistor 160 V, 20 W, TO-126 Package KSC2690AYSTU

The onsemi KSC2690AYSTU is a high-performance bipolar NPN transistor designed for power amplification and switching applications in industrial, electronic, and power circuitry environments.

This transistor supports a maximum DC collector current of 1.2 A and can handle a collector-emitter voltage up to 160 V, making it suitable for medium power loads. It is constructed with a 3-pin TO-126 package providing excellent thermal performance and mechanical stability for through-hole mounting.

Operating temperature ranges from 0°C to 150°C, allowing reliable function across a broad range of industrial and commercial applications. Additional features include a minimum current gain of 35, ensuring effective amplification, and a maximum transition frequency of 1 MHz, suitable for many switching applications.

Physical dimensions are compact, with a height of 27.26 mm, length of 8 mm, and width of 3.25 mm, enabling efficient PCB design integration. This transistor supports a maximum power dissipation of 20 W, ensuring durability under thermal stress.

The maximum emitter-base voltage rating of 5 V protects the device in various circuit conditions. This device is ideal for use in industrial electronics, power management, and discrete semiconductor applications where reliable high-power NPN transistor switching is required.

Explore comprehensive solutions for discrete semiconductors and Bipolar Transistors in electronics manufacturing and repair contexts.