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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 17A 500V Enhancement Mode 3-Pin TO-247 STW20NK50Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW20NK50Z |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 270mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 85nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- This device supports enhancement mode operation with a maximum drain-source resistance of 270 milliohms.
- The package is designed for through-hole mounting, ensuring strong mechanical and thermal connection.
- Typical gate charge is 85nC at Vgs, enabling efficient switching for power management applications.
- It operates across a wide temperature range from -55°C to 150°C, suitable for robust industrial environments.
- Maximum power dissipation is rated at 190W, providing efficient heat management in demanding circuits.
- The maximum gate-source voltage tolerance is ±30V, helping ensure device reliability under voltage spikes.
- Physical dimensions include a length of 15.75mm, height of 20.15mm, and width of 5.15mm, complying with TO-247 package standards.
Product Description
STMicroelectronics STW20NK50Z MDmesh SuperMESH N-Channel MOSFET offers a robust solution for power switching applications with a continuous drain current of 17A and drain-source voltage rating of 500V. This TO-247 packaged MOSFET is designed for through-hole mounting, combining high performance and reliable thermal management.
The enhancement mode device features a low maximum drain-source resistance of 270 milliohms, allowing efficient conduction and minimal power loss. Typical gate charge of 85nC at gate voltage facilitates fast switching speeds, suitable for industrial, automotive, and power electronics applications.
This MOSFET supports operation in extreme temperatures ranging from -55°C up to 150°C, ensuring durability and stable performance under harsh conditions. The device can safely dissipate up to 190W power, making it suitable for high power circuits and systems.
Its maximum gate-source voltage is rated at ±30V, safeguarding against voltage transients. Forward voltage drop is 1.6V, enhancing energy efficiency in switching operations.
The compact TO-247 package measures 20.15mm in height, 15.75mm in length, and 5.15mm in width, facilitating easy integration into various circuit designs requiring through-hole mount components.
This MOSFET is ideal for power management in industrial electronics, HVAC systems, manufacturing equipment, and automotive electronic controls. Designed with MDmesh SuperMESH technology by STMicroelectronics to deliver enhanced switching performance and reliability.
Perfect choice for applications requiring a rugged, efficient N-channel MOSFET with excellent thermal and electrical characteristics. Explore our comprehensive range of semiconductor devices and MOSFETs for efficient power management solutions on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17A.
It has a maximum drain-source voltage rating of 500V.
The maximum power dissipation is rated at 190W.
The dimensions of the TO-247 package are 20.15mm in height, 15.75mm in length, and 5.15mm in width.
The typical gate charge at Vgs is 85nC.
The maximum gate-source voltage tolerance is ±30V.
The maximum drain-source resistance is 270 milliohms.
It operates across a wide temperature range from -55°C to 150°C.
The forward voltage drop is 1.6V.
This model supports through-hole mounting.
It is suitable for power management in industrial electronics, HVAC systems, manufacturing equipment, and automotive electronic controls.
This MOSFET belongs to the MDmesh and SuperMESH series.
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