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STMicroelectronics STripFET F7 N-Channel MOSFET, 80 A, 60 V, Enhancement Mode, 3-Pin TO-220 Package STP130N6F7

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 9.15mm
Length 10.4mm
Model STP130N6F7
Width 4.6mm
Mount Type Through Hole
Series STripFET F7
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 80A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 5mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 160W
Typical Gate Charge Qg @ Vgs 13.6nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • The device features a maximum drain-source resistance of 5 milliohms for low power loss.
  • Designed with an enhancement mode channel for reliable operation.
  • Maximum gate-source voltage ranges from -20 V to +20 V to accommodate diverse control circuits.
  • Supports high power dissipation up to 160 W with a forward voltage of 1.2 V.
  • Operates across a wide temperature range from -55°C to 175°C for industrial applications.
  • Compact 3-pin TO-220 package ensures easy through-hole mounting and efficient heat dissipation.
  • Typical gate charge of 13.6 nC enables fast switching performance.
  • Ideal for power management in electronic, industrial, and automotive circuits.

Product Description

STMicroelectronics STP130N6F7 is a high-performance N-Channel STripFET F7 series MOSFET designed for low-voltage power switching applications. This MOSFET supports a continuous drain current of 80 A and can withstand a drain-source voltage of 60 V. Packaged in a 3-pin TO-220 format, it facilitates easy and reliable through-hole mounting while allowing efficient thermal management.

Featuring a low on-state resistance of 5 milliohms, this device reduces conduction losses, enhancing overall system efficiency. The enhancement mode channel provides robust switching capabilities, suitable for high-speed and precision electronic circuits. The maximum gate-source voltage rating of -20 V to +20 V ensures compatibility with a broad range of gate drive voltages.

With a maximum power dissipation rating of 160 W and a forward voltage of 1.2 V, the STP130N6F7 is capable of handling significant power levels in compact form factors. It exhibits reliable operation within extreme temperature limits from -55°C to 175°C, making it suitable for industrial, laboratory, HVAC, and automotive electronics applications.

The MOSFET’s typical gate charge of 13.6 nC allows for fast switching speeds and greater efficiency in pulse-width modulation and power conversion circuits. While not compliant with automotive standards, this discrete semiconductor device is ideal for power supply regulation, motor control, and load switching tasks within various electronic systems.

The device has a 3-pin TO-220 through-hole package for ease of mounting. Offers efficient power management with low on-resistance and fast gate charge. Operates safely across a wide temperature range and high power levels.

Designed for demanding electronic, industrial, and commercial applications. STMicroelectronics is a leading brand in power semiconductor devices. Explore more MOSFETs and discrete semiconductors at EnvMart to find the best solution for your electronic design and manufacturing needs.

STMicroelectronics STripFET F7 N-Channel MOSFET, 80 A, 60 V, Enhancement Mode, 3-Pin TO-220 Package STP130N6F7
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