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STMicroelectronics STripFET Type P-Channel MOSFET 3 A 60 V Enhancement 4-Pin SOT-223 STN3P6F6
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | STN3P6F6 |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 160mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.6W |
| Typical Gate Charge Qg @ Vgs | 6.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.1V |
Key Features
- The MOSFET provides a maximum continuous drain current of 3 A.
- Maximum drain-source voltage is rated at 60 V for reliable operation.
- It comes in a 4-pin SOT-223 surface-mount package suitable for compact PCB designs.
- Boasts ultra-low typical gate charge of 6.4 nC for efficient switching.
- Maximum drain-source resistance (Rds) of 160 mΩ minimizes conduction losses.
- Capable of operating from -55°C up to 175°C ambient temperature.
- Supports maximum power dissipation of 2.6 W for effective thermal management.
- Maximum gate-source voltage rating of ±20 V ensures robust gate drive capability.
Product Description
STMicroelectronics STN3P6F6 is a P-Channel Enhancement Mode STripFET™ Power MOSFET designed for various industrial and electronic applications requiring efficient power switching. Rated with a continuous drain current of 3 A and voltage tolerance of 60 V, it offers reliable performance in compact and surface-mount 4-pin SOT-223 package.
Featuring ultra-low gate charge (6.4 nC) and low drain-source resistance (160 mΩ), the device optimizes switching efficiency in power management circuits. Its thermal capability allows operation across a broad temperature range from -55°C to 175°C, ensuring durability in harsh environments.
The MOSFET supports a maximum power dissipation of 2.6 W and withstands gate-source voltages up to ±20 V, providing robust operation for load switching and amplification tasks commonly found in automotive, industrial, and power supply applications.
Its compact dimensions (length 6.7 mm, width 3.7 mm, height 1.8 mm) facilitate usage in space-constrained PCB layouts. This component is manufactured in China and complies with standard semiconductor device requirements without specific automotive certifications.
The MOSFET provides a maximum continuous drain current of 3 A. Maximum drain-source voltage is rated at 60 V for reliable operation. It comes in a 4-pin SOT-223 surface-mount package suitable for compact PCB designs. Boasts ultra-low typical gate charge of 6.4 nC for efficient switching.
Maximum drain-source resistance (Rds) of 160 mΩ minimizes conduction losses. Capable of operating from -55°C up to 175°C ambient temperature. Supports maximum power dissipation of 2.6 W for effective thermal management. Maximum gate-source voltage rating of ±20 V ensures robust gate drive capability.
This STMicroelectronics MOSFET series is ideal for applications in industrial power control, electronic driver circuits, consumer electronics, and automotive subsystems where compactness and efficiency are critical. Explore more in the MOSFET category on EnvMart for advanced semiconductor components modeled for performance and reliability.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3 A.
This MOSFET has a maximum drain-source voltage rating of 60 V.
The typical gate charge for the STN3P6F6 is 6.4 nC, which contributes to its efficient switching capabilities.
The maximum drain-source resistance (Rds) for this unit is 160 mΩ, minimizing conduction losses.
It can operate within a temperature range of -55°C to 175°C.
The maximum power dissipation supported by this MOSFET is 2.6 W.
This model comes in a 4-pin SOT-223 surface-mount package, suitable for compact PCB designs.
The maximum gate-source voltage rating for this MOSFET is ±20 V.
The dimensions of this unit are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height.
This MOSFET has a P-Channel type, designed for enhancement mode operation.
This MOSFET is suitable for applications in industrial power control, electronic driver circuits, consumer electronics, and automotive subsystems.
The STMicroelectronics STN3P6F6 is manufactured in China.
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