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STMicroelectronics STripFET Type P-Channel MOSFET 60 A, 40 V, 8-Pin PowerFLAT Package STL60P4LLF6
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 0.95mm |
| Length | 6.35mm |
| Model | STL60P4LLF6 |
| Width | 5.4mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | PowerFLAT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 60A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 19mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 100W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Built with enhancement mode for efficient switching performance.
- Features ultra-low typical gate charge of 34nC at Vgs = 4.
- Maximum drain source resistance is a low 19 milliohms.
- Capable of dissipating up to 100 W of power.
- Operates reliably from a minimum temperature of -55°C up to a maximum of 175°C.
- Designed for surface mount applications with PowerFLAT package type.
- Maximum gate source voltage rating of -20V to +20V ensures flexibility in control circuits.
- Forward voltage drop is approximately 1.1 V.
Product Description
STMicroelectronics STL60P4LLF6 is a P-Channel STripFET™ Power MOSFET designed for high efficiency and power management in electronic components.
This device features a maximum continuous drain current of 60 A and a maximum drain source voltage of 40 V, making it suitable for demanding applications in power electronics and switching circuits.
The MOSFET is fabricated using enhancement mode technology with ultra-low gate charge, ensuring minimal switching losses and improved performance in high-frequency operations.
Its PowerFLAT 8-pin surface mount package provides a compact footprint with precise physical dimensions (6.35 mm length, 5.4 mm width, and 0.95 mm height), ideal for automated PCB assembly in industrial, automotive, and consumer electronics.
The transistor is rated for a maximum power dissipation of 100 W and supports a wide operating temperature range from -55°C to 175°C, enabling reliable operation in harsh environments.
Enhancement mode technology optimizes switching efficiency. Low typical gate charge of 34nC reduces power consumption during switching. Low on-resistance (19 milliohms) minimizes conduction losses. High maximum power dissipation capability (100 W) supports heavy loads.
Wide operating temperature range for versatile industrial and automotive use. Compact PowerFLAT package suitable for surface mount applications. Robust maximum gate voltage ratings (-20 V to +20 V) enable flexible control.
Applications include industrial power supplies, motor controls, automotive power management, and other high-performance electronic circuits requiring efficient P-Channel MOSFET solutions.
Country of origin is China. Explore more components in the MOSFET category at EnvMart for reliable semiconductor solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 60 A.
This MOSFET has a maximum drain-source voltage of 40 V.
The typical gate charge at Vgs = 4 is 34 nC.
It can dissipate up to 100 W of power.
The maximum drain source resistance is 19 milliohms.
The operating temperature range is from -55°C to 175°C.
It is designed in a PowerFLAT 8-pin surface mount package.
The dimensions are 6.35 mm in length, 5.4 mm in width, and 0.95 mm in height.
The maximum gate-source voltage rating is -20 V to +20 V.
It is suitable for applications including industrial power supplies, motor controls, and automotive power management.
This model utilizes enhancement mode technology.
The forward voltage drop is approximately 1.1 V.
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