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STMicroelectronics P-Channel STripFET Power MOSFET 42 A, 60 V Enhancement Mode, 8-Pin PowerFLAT STL42P6LLF6

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 0.95mm
Length 6.35mm
Model STL42P6LLF6
Width 5.4mm
Mount Type Surface
Series STripFET
Maximum Operating Temperature 175°C
Package Type PowerFLAT
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type Type P
Maximum Continuous Drain Current Id 42A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 34mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 100W
Typical Gate Charge Qg @ Vgs 30nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.1V

Key Features

  • Equipped with an 8-pin PowerFLAT surface mount package for efficient installation.
  • Offers ultra-low gate charge of 30 nC at Vgs for enhanced switching performance.
  • Maximum operating temperature of 175°C suitable for demanding industrial environments.
  • Low on-resistance Rds(on) of 34 mΩ helps reduce power loss and heat dissipation.
  • Designed for enhancement mode operation with a maximum power dissipation of 100 W.
  • Wide temperature tolerance from -55°C minimum to 175°C maximum operating range.
  • Gate-source voltage rating of -20 V to +20 V ensures robustness under varying control voltages.
  • Typical forward voltage of 1.1 V contributes to efficient conduction characteristics.

Product Description

STMicroelectronics STL42P6LLF6 is a high-performance P-Channel STripFET Power MOSFET designed for applications requiring efficient power management and switching. It supports a continuous drain current of 42 A and can withstand a drain-source voltage of up to 60 V with enhancement mode operation. This MOSFET utilizes an 8-pin PowerFLAT package suitable for surface mounting, allowing compact and efficient circuit design.

This device features ultra-low gate charge of 30 nC at gate-source voltage, enabling fast switching with minimal power consumption. Its low on-resistance Rds(on) of 34 mΩ reduces conduction losses and heat generation, making it ideal for high-efficiency power conversion and load switching.

Operating temperature ranges from -55°C to a maximum of 175°C, allowing deployment in demanding industrial, automotive, and power electronics environments. The maximum power dissipation rating of 100 W supports high power handling capabilities within compact electronic systems.

Physical dimensions of 6.35 mm in length, 5.4 mm in width, and 0.95 mm in height ensure suitability for modern PCB layouts requiring space savings. The gate-source voltage tolerance between -20 V and +20 V provides design flexibility for various control signal levels.

Applications include power management circuits, load switching, motor control, and industrial power supplies, emphasizing reliability and performance in demanding electronic designs.

Equipped with an 8-pin PowerFLAT surface mount package for efficient installation. Offers ultra-low gate charge of 30 nC at Vgs for enhanced switching performance. Maximum operating temperature of 175°C suitable for demanding industrial environments.

Low on-resistance Rds(on) of 34 mΩ helps reduce power loss and heat dissipation. Designed for enhancement mode operation with a maximum power dissipation of 100 W. Wide temperature tolerance from -55°C minimum to 175°C maximum operating range.

Compact dimensions: length 6.35 mm, width 5.4 mm, and height 0.95 mm for space-constrained applications. Gate-source voltage rating of -20 V to +20 V ensures robustness under varying control voltages. Typical forward voltage of 1.1 V contributes to efficient conduction characteristics.

Choose STMicroelectronics STL42P6LLF6 Power MOSFET from EnvMart for reliable, high-efficiency power control in electronic, industrial, and automotive applications. Explore our comprehensive semiconductor selections for your design and production needs.

STMicroelectronics P-Channel STripFET Power MOSFET 42 A, 60 V Enhancement Mode, 8-Pin PowerFLAT STL42P6LLF6
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Frequently Asked Questions

The maximum continuous drain current for this model is 42 A.

It can withstand a maximum drain-source voltage of 60 V.

The on-resistance (Rds(on)) is 34 mΩ, which helps reduce conduction losses.

The gate-source voltage rating is between -20 V and +20 V.

The operating temperature range is from -55°C to a maximum of 175°C.

This model has dimensions of 6.35 mm in length, 5.4 mm in width, and 0.95 mm in height.

The typical gate charge at Vgs is 30 nC, contributing to enhanced switching performance.

The maximum power dissipation rating is 100 W.

It comes in an 8-pin PowerFLAT surface mount package.

This MOSFET is suitable for power management circuits, load switching, motor control, and industrial power supplies.

The typical forward voltage is 1.1 V, which contributes to efficient conduction characteristics.

This model features a P-channel type, designed for enhancement mode operation.

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