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STMicroelectronics DeepGate STripFET N-Channel MOSFET 110 A, 100 V Enhancement 3-Pin H2PAK STH150N10F7-2
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.8mm |
| Length | 10.4mm |
| Model | STH150N10F7-2 |
| Width | 10.57mm |
| Mount Type | Surface |
| Series | DeepGate, STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | H2PAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 110A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 3.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 117nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- High continuous drain current rating of 110 amperes ensures robust power handling.
- Supports a maximum drain-source voltage of 100 volts for reliable operation.
- Features ultra-low on-resistance of 3.9 milliohms, improving efficiency.
- Packaged in compact 3-pin H2PAK surface-mount for easy PCB integration.
- Maximum power dissipation of 250 watts to handle demanding loads effectively.
- Typical gate charge is 117 nanocoulombs for fast switching performance.
- Operating temperature range from -55°C to 175°C suitable for harsh environments.
- Channel mode is enhancement type, optimized for switching applications.
Product Description
STMicroelectronics STH150N10F7-2 is a DeepGate STripFET N-Channel MOSFET offering high current and voltage handling capabilities suitable for industrial, power management, and electronic design applications. It supports a maximum continuous drain current of 110 A and a drain-source voltage of 100 V, enabling efficient power switching in compact form factor. The device uses an enhancement mode channel for reliable operation and integrates a low on-resistance of 3.9 mΩ to minimize conduction losses.
This MOSFET comes in a 3-pin H2PAK surface-mount package, featuring dimensions of 10.4 mm length, 10.57 mm width, and 4.8 mm height, making it suitable for high-density electronic assembly. The power dissipation rating of 250 W enables handling of high power applications while maintaining thermal stability over a wide temperature range from -55°C to 175°C.
The device's typical gate charge of 117 nC and gate-source voltage ratings of -20 V to +20 V ensure optimized switching performance for power conversion, motor drive, and industrial control systems. Forward voltage is specified at 1.2 V, supporting efficient operation in demand-intensive circuits.
STH150N10F7-2 MOSFETs are ideal for professional use in industrial electronic components, power supply design, manufacturing environments, and electrical equipment requiring robust semiconductor devices.
High continuous drain current of 110 A for demanding power applications. Low on-resistance of 3.9 mΩ reduces power loss and heat generation. Compact 3-pin H2PAK package for easy surface mounting. Wide operating temperature range suits harsh industrial conditions.
Enhanced switching due to low gate charge and wide gate voltage range. Efficient power dissipation capability supports high load demands. Explore the comprehensive range of semiconductor components and MOSFETs on EnvMart to find matching solutions for your industrial and electronic needs.
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Frequently Asked Questions
The maximum continuous drain current for the STH150N10F7-2 is 110 A, making it suitable for demanding power applications.
This model supports a maximum drain-source voltage of 100 V, ensuring reliable operation in various applications.
The on-resistance of this MOSFET is 3.9 milliohms, which helps to improve efficiency by reducing conduction losses.
The typical gate charge for the STH150N10F7-2 is 117 nanocoulombs, facilitating fast switching performance.
The H2PAK package dimensions are 10.4 mm in length, 10.57 mm in width, and 4.8 mm in height, making it suitable for high-density electronic assembly.
The operating temperature range for the STH150N10F7-2 is from -55°C to 175°C, which is suitable for harsh environments.
This MOSFET has a maximum power dissipation rating of 250 watts, allowing it to handle high load demands effectively.
The channel mode of this model is enhancement type, optimized for reliable switching applications.
The forward voltage for the STH150N10F7-2 is specified at 1.2 V, supporting efficient operation in various circuits.
The maximum gate-source voltage ratings for this MOSFET are -20 V to +20 V, which ensures optimized switching performance.
This model uses a surface mount type, specifically packaged in a compact H2PAK configuration for easy PCB integration.
The STH150N10F7-2 belongs to the DeepGate and STripFET series, designed for high performance in power management applications.
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