Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

Infineon N-Channel IGBT Module 55 A 1.2 kV 35-Pin ECONO3 Through Hole FP40R12KE3GBOSA1

Category IGBT Module Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 17mm
Length 122mm
Model FP40R12KE3GBOSA1
Width 62mm
Mount Type Through Hole
Series FP40R12KE3G
Maximum Operating Temperature 125°C
Package Type ECONO3
Minimum Operating Temperature -40°C
Pin Count 35
Maximum Continuous Collector Current Ic 55A
Maximum Collector Emitter Voltage Vceo 1.2kV
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V
Channel Type N
Maximum Power Dissipation Pd 210W
Maximum Gate Emitter Voltage VGEO 20 V
Package styles include 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
Number of Transistors 7

Key Features

  • Operates with a maximum continuous collector current of 55 amperes.
  • Maximum collector emitter voltage of 1.2 kilovolts for high voltage applications.
  • Rated power dissipation up to 210 watts ensuring reliability under load.
  • Comprises 7 transistors integrated in ECONO3 package type with 35 pins.
  • Designed for through-hole mount offering robust mechanical connection.
  • Maximum gate emitter voltage is 20 volts supporting effective switching.
  • Operating temperature range from -40°C to 125°C suitable for harsh environments.
  • Suitable for industrial, commercial, and automotive inverter and drive applications.

Product Description

Infineon FP40R12KE3GBOSA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) Module designed for power semiconductor applications. It supports a maximum continuous collector current of 55 A and a collector emitter voltage rating of 1.2 kV, packaged in a 35-pin ECONO3 through-hole form factor.

This module offers efficient switching with low losses, suitable for switching frequencies up to 60 kHz. The device contains 7 transistors optimized for both hard and soft switching, making it ideal for inverters, uninterruptible power supplies (UPS), and industrial drive systems.

The thermal resilience supports operation between -40°C and 125°C, making it appropriate for demanding industrial, commercial, construction machinery, and agricultural vehicle applications.

Mechanical dimensions are 122 mm in length, 62 mm width, and 17 mm height, ensuring compatibility with various mounting requirements. The package style aligns with ECONO3 design standards used widely in power modules.

Key technical features include a maximum gate emitter voltage of 20 V and maximum power dissipation of 210 W, ensuring durability and robust operation in high power circuits. Operates with a maximum continuous collector current of 55 amperes.

Maximum collector emitter voltage of 1.2 kilovolts for high voltage applications. Rated power dissipation up to 210 watts ensuring reliability under load. Comprises 7 transistors integrated in ECONO3 package type with 35 pins.

Designed for through-hole mount offering robust mechanical connection. Maximum gate emitter voltage is 20 volts supporting effective switching. Operating temperature range from -40°C to 125°C suitable for harsh environments.

Compact dimensions: Length 122mm, Width 62mm, Height 17mm. Suitable for industrial, commercial, and automotive inverter and drive applications.

This IGBT Module belongs to Infineon's FP40R12KE3G series known for low switching losses and reliability. Its application areas include industrial automation, power conversion, electric drives, and renewable energy systems.

Explore more industrial semiconductor solutions and compatible modules at EnvMart to enhance your electronic system designs.

Infineon N-Channel IGBT Module 55 A 1.2 kV 35-Pin ECONO3 Through Hole FP40R12KE3GBOSA1
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous collector current for this module is 55 amperes.

It has a maximum collector emitter voltage rating of 1.2 kilovolts.

The rated power dissipation is up to 210 watts, ensuring reliable operation under load.

The dimensions are 122 mm in length, 62 mm in width, and 17 mm in height.

This model operates within a temperature range of -40°C to 125°C.

It comprises 7 transistors integrated in the ECONO3 package type.

The maximum gate emitter voltage is 20 volts, which supports effective switching.

This module is designed for through-hole mounting, providing a robust mechanical connection.

It is suitable for industrial, commercial, and automotive inverter and drive applications.

It uses the ECONO3 package type, which is commonly used in power modules.

The maximum collector emitter saturation voltage is 2.3 volts.

This module belongs to the FP40R12KE3G series, known for low switching losses and reliability.

Related Products

Other Products from this brand

$157.99
$153.25 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$157.99
$153.25
Tax included