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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 17mm |
| Length | 122mm |
| Model | FP40R12KE3GBOSA1 |
| Width | 62mm |
| Mount Type | Through Hole |
| Series | FP40R12KE3G |
| Maximum Operating Temperature | 125°C |
| Package Type | ECONO3 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 35 |
| Maximum Continuous Collector Current Ic | 55A |
| Maximum Collector Emitter Voltage Vceo | 1.2kV |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 210W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Package styles include | 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4 |
| Number of Transistors | 7 |
Infineon FP40R12KE3GBOSA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) Module designed for power semiconductor applications. It supports a maximum continuous collector current of 55 A and a collector emitter voltage rating of 1.2 kV, packaged in a 35-pin ECONO3 through-hole form factor.
This module offers efficient switching with low losses, suitable for switching frequencies up to 60 kHz. The device contains 7 transistors optimized for both hard and soft switching, making it ideal for inverters, uninterruptible power supplies (UPS), and industrial drive systems.
The thermal resilience supports operation between -40°C and 125°C, making it appropriate for demanding industrial, commercial, construction machinery, and agricultural vehicle applications.
Mechanical dimensions are 122 mm in length, 62 mm width, and 17 mm height, ensuring compatibility with various mounting requirements. The package style aligns with ECONO3 design standards used widely in power modules.
Key technical features include a maximum gate emitter voltage of 20 V and maximum power dissipation of 210 W, ensuring durability and robust operation in high power circuits. Operates with a maximum continuous collector current of 55 amperes.
Maximum collector emitter voltage of 1.2 kilovolts for high voltage applications. Rated power dissipation up to 210 watts ensuring reliability under load. Comprises 7 transistors integrated in ECONO3 package type with 35 pins.
Designed for through-hole mount offering robust mechanical connection. Maximum gate emitter voltage is 20 volts supporting effective switching. Operating temperature range from -40°C to 125°C suitable for harsh environments.
Compact dimensions: Length 122mm, Width 62mm, Height 17mm. Suitable for industrial, commercial, and automotive inverter and drive applications.
This IGBT Module belongs to Infineon's FP40R12KE3G series known for low switching losses and reliability. Its application areas include industrial automation, power conversion, electric drives, and renewable energy systems.
Explore more industrial semiconductor solutions and compatible modules at EnvMart to enhance your electronic system designs.
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