Infineon N-Channel IGBT Module 225 A 1200 V 7-Pin 62 mm Module Clamp FF150R12KS4HOSA1

Infineon FF150R12KS4HOSA1 N-Channel IGBT Module is designed for high efficiency and fast switching in demanding industrial power electronics applications. This module supports a maximum continuous collector current of 225 A and a maximum collector-emitter voltage of 1200 V, making it suitable for robust power management tasks.

The 62 mm module package type with clamp mounting ensures a compact and secure fit for power semiconductor assemblies.

Key features include a fast switching speed of 1 MHz, a maximum power dissipation capacity of 1.25 kW, and a gate-emitter voltage rating up to 20 V, which together contribute to efficient power control.

The module operates reliably over a wide temperature range from -40°C to 125°C, suitable for industrial, commercial, construction, and agricultural vehicle power electronics.

This IGBT Module incorporates Infineon’s advanced TRENCHSTOP™ technology for excellent soft and hard switching performance, ideal for applications such as inverters, uninterruptible power supplies (UPS), and industrial motor drives.

Maximum continuous collector current of 225 A. Maximum collector-emitter voltage of 1200 V. Switching frequency capability up to 1 MHz. Clamp mounting for secure installation. Wide operating temperature range from -40°C to 125°C.

Compact 62 mm module size. Low saturation voltage of 3.85 V. High power dissipation of 1.25 kW. 7-pin design optimized for industrial power conversion. Robust TRENCHSTOP™ IGBT technology for enhanced efficiency. This module is highly suitable for applications in power electronics involving industrial automation, manufacturing equipment, and renewable energy systems.

Explore EnvMart’s extensive range of Infineon power semiconductor modules for advanced power management solutions tailored to your engineering needs.