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| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1mm |
| Length | 4.35mm |
| Model | V4PAN50-M3/I |
| Width | 2.7mm |
| Mount Type | Surface |
| Series | V4 |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-221BC |
| Minimum Operating Temperature | -40°C |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 4A |
| Peak Reverse Repetitive Voltage Vrrm | 50V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 35mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 80A |
| Maximum Forward Voltage Vf | 590mV |
Vishay V4PAN50-M3/I is a high-performance Schottky Diode designed for surface mounting in compact electronic circuits requiring efficient power rectification. This diode features a patented trench MOS barrier structure that minimizes minority carrier injection, significantly reducing stored charge and enhancing switching speeds. It is rated for a maximum continuous forward current of 4 amperes and a peak reverse repetitive voltage of 50 volts, making it suitable for demanding power supply applications.
The device provides a low maximum forward voltage of 590 millivolts, ensuring reduced power losses during conduction. With a peak non-repetitive forward surge current capacity of 80 amperes, it can handle transient high current conditions safely. Its operating temperature range spans from -40°C to 150°C, ensuring reliability in harsh environments.
The diode is housed in a compact DO-221BC surface mount package measuring 4.35 mm in length, 2.7 mm in width, and 1 mm in height, facilitating easy integration into dense PCB layouts. Its single diode configuration and 2-pin design allow straightforward implementation in various circuits.
Industrial and commercial uses include AC/DC switched mode power supplies, DC/DC converters, and other power management systems where high power density and fast switching speeds are critical. The Vishay V4PAN50-M3/I is manufactured in China, conforming to Vishay’s stringent quality controls.
Features patented trench MOS barrier structure to reduce stored charge and improve switching speed. Maximum forward voltage drop is 590 mV for efficient power rectification. Capable of handling peak non-repetitive surge current of 80 A.
Operates over a temperature range from -40°C to 150°C. Compact DO-221BC package with dimensions 4.35 mm length, 2.7 mm width, and 1 mm height. Single diode configuration with 2 pins designed for surface mounting. Suitable for use in AC/DC switched mode power supplies and DC/DC converters.
Manufactured in China under Vishay’s quality standards. Explore the full range of Vishay semiconductor components and other high-reliability electronic devices on EnvMart for your industrial and commercial electronic design projects.
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