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STMicroelectronics MDmesh K5, SuperMESH5 N-Channel MOSFET, 2 A, 950 V Enhancement Mode, 3-Pin TO-252 STD2N95K5
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | SuperMESH5 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | MDmesh K5, SuperMESH5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2A |
| Maximum Drain Source Voltage Vds | 950V |
| Maximum Drain Source Resistance Rds | 5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
Key Features
- The device features a compact 3-pin TO-252 surface mount package.
- It supports a maximum power dissipation of 45 W, suitable for efficient power switching applications.
- Has a maximum gate-source voltage rating of 30 V for reliable gate control.
- The typical gate charge at Vgs is low at 10 nC, enabling fast switching.
- Designed to operate between -55°C and 150°C for demanding environments.
- Maximum drain-source resistance (Rds) is 5 Ω, ensuring low conduction losses.
- Forward voltage drop is 1.5 V under specified conditions.
Product Description
STMicroelectronics STD2N95K5 MDmesh K5, SuperMESH5 N-Channel MOSFET is a high-performance discrete semiconductor device designed for power management and switching applications.
This enhancement-mode MOSFET delivers a continuous drain current of 2 A and can withstand drain-source voltages up to 950 V, making it suitable for high voltage applications in industrial, commercial, and electronic system designs.
The device is housed in a compact 3-pin TO-252 surface mount package optimized for reliable automated PCB assembly. It features a maximum power dissipation rating of 45 W, enabling efficient thermal handling in circuits requiring moderate power dissipation.
The MOSFET supports a maximum gate-source voltage of ±30 V and exhibits a typical gate charge of 10 nC, facilitating fast switching characteristics essential in power conversion and management circuits.
Operational temperature range from -55°C up to 150°C makes it robust for harsh environments found in industrial automation and power electronics. Additionally, the device offers a maximum drain-source resistance (Rds) of 5 Ω, minimizing conduction losses and improving overall system efficiency.
Its physical dimensions (6.6 mm length, 6.2 mm width, 2.4 mm height) support precise footprint specifications in compact designs. The device is ideal for use in industrial power supply circuits, motor controls, and inverter systems.
Applications extend to commercial electronics requiring high voltage switching capabilities. It supports reliable surface mount assembly methodologies. Robust operating temperature and electrical parameters suit it for harsh industrial conditions.
Low gate charge enables energy-efficient high-speed switching. This MOSFET is part of STMicroelectronics’ MDmesh K5 SuperMESH5 series known for reliability and performance in power electronics. Explore EnvMart’s range of semiconductor devices and discrete MOSFETs for high-quality components suited to diverse electronics applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2 A.
This MOSFET can withstand a maximum drain-source voltage of 950 V.
It has a maximum power dissipation rating of 45 W, suitable for efficient thermal handling in circuits.
The typical gate charge at Vgs is low at 10 nC, enabling fast switching characteristics.
The physical dimensions are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
The maximum gate-source voltage rating is ±30 V, ensuring reliable gate control.
It operates within a temperature range of -55°C to 150°C, making it suitable for harsh environments.
The maximum drain-source resistance (Rds) is 5 Ω, which minimizes conduction losses.
This model is housed in a compact 3-pin TO-252 surface mount package.
It is suitable for power management and switching applications, including industrial power supply circuits and motor controls.
This device utilizes an N-channel configuration, designed for enhancement mode operation.
The forward voltage drop is 1.5 V under specified conditions.
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