STMicroelectronics STripFET N-Channel MOSFET, 40 A, 200 V Enhancement Mode, 3-Pin TO-263 Package STB40NF20

STMicroelectronics STB40NF20 is a high-performance N-Channel STripFET™ MOSFET designed for efficient power switching and amplification applications. It supports a maximum continuous drain current of 40 A and a drain-source breakdown voltage of 200 V in a compact TO-263 surface mount package.

This device operates in enhancement mode, providing excellent conductivity with a maximum drain-source resistance of 45 milliohms, which reduces conduction losses and improves overall system efficiency. Its typical gate charge of 75 nanocoulombs and gate voltage rating from -20 V to +20 V allow fast switching speeds and robust control.

The STB40NF20 offers a wide operating temperature range from -55°C to 150°C, making it suitable for demanding industrial, automotive, and electronic power management contexts where reliability under varying temperature conditions is critical.

Its compact TO-263 package dimensions of length 10.4 mm, width 9.35 mm, and height 4.6 mm facilitate high-density PCB layouts and surface mounting. The maximum power dissipation of 160 watts ensures that the device can handle significant loads without compromising performance.

Industrially, this MOSFET is applied in power supplies, motor drivers, and switching regulators, providing efficient and reliable handling of high current and voltage levels. The STB40NF20 aligns with contemporary electronics manufacturing requiring surface mount technology and robust power semiconductor components.

This MOSFET supports a maximum continuous drain current of 40 amperes. Maximum drain-source voltage is rated at 200 volts for robust operation. Designed with enhancement mode channel type for improved switching performance.

Features a low drain-source resistance of 45 milliohms to minimize conduction losses. Operates reliably within a temperature range from -55 to 150 degrees Celsius. Typical gate charge is 75 nanocoulombs at gate-source voltage, enabling fast switching.

Maximum gate-source voltage tolerates -20 to +20 volts for gate flexibility. Power dissipation capability up to 160 watts supports high power handling. Compact dimensions with a TO-263 package measuring 10.4 mm length, 9.35 mm width, and 4.6 mm height.

Suitable for industrial and electronic power management applications requiring surface mount components. Explore EnvMart's Electronics category for more high-quality semiconductors and MOSFET components designed to meet various industrial and commercial electrical requirements.