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DiodesZetex General Purpose PNP Transistor SOT-89 Package, -300 mA Collector Current, -200 V Collector Emitter FCX596TA

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.6mm
Length 4.6mm
Model FCX596TA
Width 4.25mm
Mount Type Surface
Series FCX596
Maximum Operating Temperature 150°C
Package Type SOT-89
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -200V
Minimum DC Current Gain hFE 35
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -220V
Maximum Power Dissipation Pd 1W
Maximum DC Collector Current Idc -300mA
Transistor Configuration Single
Maximum Transition Frequency ft 150MHz

Key Features

  • Maximum collector current of -300 mA suitable for varied circuits.
  • Collector emitter voltage rated at -200 V for robust performance.
  • Package type SOT-89 enables compact PCB mounting.
  • Maximum power dissipation is 1W to maintain thermal stability.
  • Minimum DC current gain of 35 ensures efficient amplification.
  • Operating temperature ranges from -55°C to 150°C for industrial use.
  • Maximum transition frequency of 150 MHz ideal for high-speed switching.

Product Description

DiodesZetex FCX596TA is a general purpose PNP transistor packaged in a surface mount SOT-89 form factor with 3 pins. It supports a maximum DC collector current of -300 mA and can withstand a collector emitter voltage of -200 V, making it ideal for various electronic applications including amplification and switching in industrial, commercial, and consumer electronics.

This transistor features a maximum power dissipation of 1 watt and a minimum DC current gain (hFE) of 35, ensuring reliable signal amplification and thermal management. Its maximum transition frequency of 150 MHz supports high-frequency operations common in communication and control circuits.

Designed for surface mount technology, the SOT-89 package allows for compact assembly on PCBs. Its operational temperature range of -55°C to 150°C ensures stability under harsh environmental conditions, making it suitable for automotive, industrial electronics, and instrumentation.

The device offers maximum collector base voltage and emitter base voltage of -220 V and -5 V respectively, adding to its robust electrical specifications. Dimensions include a length of 4.6 mm, width of 4.25 mm, and height of 1.6 mm, facilitating integration into compact circuit layouts.

These features make the DiodesZetex FCX596TA transistor suitable for applications in electronic design, laboratory prototyping, automotive electronics, and general industrial control systems.

Maximum collector current of -300 mA suitable for varied circuits. Collector emitter voltage rated at -200 V for robust performance. Package type SOT-89 enables compact PCB mounting. Maximum power dissipation is 1W to maintain thermal stability.

Minimum DC current gain of 35 ensures efficient amplification. Operating temperature ranges from -55°C to 150°C for industrial use. Maximum transition frequency of 150 MHz ideal for high-speed switching. Compact dimensions: 4.6 mm length, 4.25 mm width, and 1.6 mm height.

Explore more semiconductor components and Bipolar Transistors in the DiodesZetex series at EnvMart for your application needs.

DiodesZetex General Purpose PNP Transistor SOT-89 Package, -300 mA Collector Current, -200 V Collector Emitter FCX596TA
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Frequently Asked Questions

The maximum collector current for this model is -300 mA, making it suitable for various electronic circuits.

It is rated for a collector-emitter voltage of -200 V, ensuring robust performance in various applications.

This transistor is packaged in a SOT-89 form factor, which facilitates compact PCB mounting.

The maximum power dissipation is 1 W, which helps maintain thermal stability during operation.

It has a minimum DC current gain (hFE) of 35, ensuring efficient amplification in circuits.

The operating temperature range is from -55°C to 150°C, making it suitable for industrial applications.

The maximum transition frequency is 150 MHz, which is ideal for high-speed switching applications.

The dimensions are 4.6 mm in length, 4.25 mm in width, and 1.6 mm in height, allowing for compact integration into circuits.

This model uses a surface mount type, which is common in modern electronic assemblies.

The maximum emitter-base voltage (VEBO) is -5 V, contributing to its robust electrical specifications.

The maximum collector-base voltage (VCBO) is -220 V, enhancing its capability for various applications.

This transistor supports a single configuration, which is typical for general-purpose applications.

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