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| Country of Origin | Malaysia |
|---|---|
| Brand | Nexperia |
| Height | 1mm |
| Length | 2.2mm |
| Model | NX3008PBKW,115 |
| Width | 1.35mm |
| Mount Type | Surface |
| Series | NX3008PBKW |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-70 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 200mA |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 6.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 830mW |
| Typical Gate Charge Qg @ Vgs | 0.55nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
The Nexperia NX3008PBKW,115 is a high-performance P-Channel MOSFET tailored for enhancement mode applications. With a maximum continuous drain current of 200 mA and a drain-source voltage of 30 V, it provides excellent switching capabilities for low-power electronic circuits.
Housed in a compact 3-pin SC-70 surface mount package, this MOSFET is suitable for space-constrained designs. The device features a low maximum drain-source resistance (Rds) of 6.5 ohms, which enables efficient conduction and minimizes power losses.
Its power dissipation rating of 830 mW and the operating temperature range from -55°C up to 150°C ensure robust performance in demanding industrial, automotive, and consumer electronics environments. The typical gate charge of 0.55 nC facilitates rapid switching speeds, enhancing overall device responsiveness.
Compliant with the AEC-Q101 automotive standard, this MOSFET is engineered to meet stringent quality and reliability requirements typical of automotive electronics. The device's physical dimensions (length 2.2 mm, width 1.35 mm, height 1 mm) allow efficient PCB layout and integration into compact modules.
This MOSFET is ideal for use in power management circuits, general switching applications, and low voltage DC-DC converters in industrial, automotive, and commercial electronic systems.
The SC-70 package offers compact housing with a 3-pin surface mount design. Features a maximum drain-source resistance of 6.5 ohms ensuring efficient conduction. Rated for maximum power dissipation of 830 mW supporting stable operation.
Operating temperature ranges from -55°C to +150°C for reliable performance in various environments. Typical gate charge is 0.55 nC at Vgs, allowing fast switching capabilities. Supports automotive applications conforming to AEC-Q101 standards.
Compact dimensions optimize PCB space for efficient design. Explore more MOSFETs and semiconductor components on EnvMart to find the ideal parts for your electronic design and manufacturing needs.
Interested in this product? Drop us an email and we will let you know when it's available for order.
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