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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.8mm |
| Length | 6.5mm |
| Model | BCP54 |
| Width | 6.96mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 45V |
| Minimum DC Current Gain hFE | 25 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 45V |
| Maximum Power Dissipation Pd | 1.5W |
| Maximum DC Collector Current Idc | 1.5A |
| Transistor Configuration | Single |
The onsemi BCP54 is an NPN bipolar junction transistor designed for switching and amplification purposes in various electronic circuits. Featuring a maximum collector current of 1.5 A and a collector-emitter voltage rating of 45 V, this device supports medium power applications efficiently.
Its compact SOT-223 package with 4 pins ensures easy surface mounting on printed circuit boards, promoting automated assembly and enhanced reliability. The transistor maintains operation across a broad temperature range from -55°C to 150°C, making it suitable for industrial, automotive, and general-purpose electronic applications.
Key specifications include a minimum DC current gain of 25 (hFE), a maximum power dissipation of 1.5 W, and voltage limits on collector-base (45 V) and emitter-base (5 V) junctions to ensure safe and stable functionality.
The physical dimensions of 6.5 mm in length, 6.96 mm in width, and 1.8 mm in height allow integration in compact electronic designs. This transistor is ideally utilized in switching circuits, signal amplification, and various discrete semiconductor applications requiring reliable NPN transistor performance.
This transistor is designed for general-purpose switching and amplification applications. Features a maximum power dissipation of 1.5 W suitable for medium power circuits. Built with a 4-pin layout ensuring reliable surface mount assembly.
Operates over a wide temperature range from -55°C to 150°C, enabling robust performance under harsh conditions. Minimum DC current gain (hFE) is 25, ensuring effective signal amplification. Compact dimensions of 6.5 mm length, 6.96 mm width, and 1.8 mm height allow space-efficient PCB design.
Maximum emitter-base voltage is 5 V, providing stable operation within specified voltage limits.
This product is suited for use in industrial, automotive, electronic manufacturing, and HVAC control circuits where dependable NPN transistor switching and amplification are required. Choose the onsemi BCP54 for quality and assured performance in your bipolar transistor needs.
Explore more products in our Bipolar Transistors category.
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