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onsemi High Voltage 12A NPN Power Transistor 400V 3-Pin TO-220 FJP13009TU
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 30.34mm |
| Length | 8.65mm |
| Model | FJP13009TU |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 400V |
| Minimum DC Current Gain hFE | 6 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 9V |
| Maximum Collector Base Voltage VCBO | 700V |
| Maximum Power Dissipation Pd | 100W |
| Maximum DC Collector Current Idc | 12A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 4MHz |
Key Features
- This transistor supports a maximum collector current of 12A.
- It has a maximum collector emitter voltage rating of 400V, suitable for demanding power circuits.
- The device is housed in a 3-pin TO-220 package optimized for through-hole mounting.
- The maximum power dissipation rating is 100W, enabling effective heat management in applications.
- Features a transistor polarity of NPN with a minimum DC current gain of 6.
- Maximum operating temperature capability is 150°C for reliable performance under thermal stress.
- The maximum transition frequency is 4MHz, catering to moderate frequency operations.
- Designed for single transistor configuration without automotive certification.
Product Description
The onsemi FJP13009TU is a high voltage, high current NPN power transistor capable of handling up to 12A collector current and voltages up to 400V. Packaged in a TO-220 form factor, it is suitable for use in demanding power switching and amplification applications.
This transistor features a maximum power dissipation of 100W, allowing efficient heat dissipation which enhances its reliability in industrial and electronic circuit systems. It supports a maximum collector base voltage of 700V and an emitter base voltage of 9V, making it a versatile component for various bipolar junction transistor (BJT) circuits.
Its operating temperature extends up to 150°C, ensuring dependable performance under high temperature conditions frequently encountered in power electronics and industrial automation settings.
The device has a transition frequency of 4MHz, facilitating applications involving moderate switching speeds and signal amplification tasks.
Its compact dimensions - 30.34 mm height, 4.7 mm width, and 8.65 mm length - and through-hole mounting type provide ease of installation on printed circuit boards (PCB). The 3-pin configuration is standard for TO-220 packaged transistors and enables straightforward connectivity.
This product does not carry automotive industry standards but is tailored for use in electronic components research, power supplies, industrial controllers, and similar equipment requiring reliable discrete semiconductor solutions.
This transistor supports a maximum collector current of 12A. Maximum collector emitter voltage rating of 400V. TO-220 3-pin packaging for efficient mounting. Power dissipation rating of 100W. Minimum DC current gain of 6 and NPN polarity.
Maximum operating temperature of 150°C. Transition frequency of 4MHz for moderate frequency applications. Compact size enabling easy PCB integration. Designed for single transistor applications without automotive standard compliance.
Ideal for applications in electronics manufacturing, power control, and industrial automation, this transistor blends robust electrical performance with practical package design for engineering projects and product development. Explore more power transistor options and related components in the EnvMart catalog.
Explore more products in our Power Transistors category.
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Frequently Asked Questions
The maximum collector current for this model is 12A.
It has a maximum collector-emitter voltage rating of 400V.
This transistor is housed in a 3-pin TO-220 package, optimized for through-hole mounting.
The maximum power dissipation rating is 100W, allowing for effective heat management.
It can operate at a maximum temperature of 150°C.
The maximum transition frequency is 4MHz, suitable for moderate frequency applications.
The minimum DC current gain is 6.
The dimensions are 30.34 mm in height, 4.7 mm in width, and 8.65 mm in length.
It is suitable for power switching and amplification applications in electronics manufacturing and industrial automation.
This model is designed for single transistor applications without automotive certification.
The maximum collector-base voltage rating is 700V.
This transistor has an NPN polarity.
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