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onsemi Small Signal NPN Transistor 700 mA 60 V TO-92 3-Pin KSC1008CYTA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 19.05mm
Length 5.2mm
Model KSC1008CYTA
Width 4.19mm
Mount Type Through Hole
Series KSC1008
Maximum Operating Temperature 150°C
Package Type TO-92
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 8V
Maximum Collector Base Voltage VCBO 80V
Maximum Power Dissipation Pd 800mW
Maximum DC Collector Current Idc 700mA
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Supports maximum DC collector current of 700 mA.
  • Collector-emitter voltage rating of up to 60 V.
  • Emitter-base voltage maximum of 8 V.
  • Power dissipation rated at 800 mW.
  • Minimum DC current gain (hFE) of 40 to ensure reliable switching.
  • Maximum operating frequency of 1 MHz suitable for low-frequency applications.
  • Compact TO-92 through-hole package with 3 pins for easy PCB mounting.
  • Maximum operating temperature of 150°C for industrial and commercial use.

Product Description

onsemi KSC1008CYTA is a high-quality small signal NPN Bipolar Junction Transistor designed for various electronic circuitry applications requiring dependable switching and amplification. It supports a continuous DC collector current of up to 700 mA and a collector-emitter voltage rating of 60 V, making it suitable for moderate power applications.

This transistor utilizes a 3-pin TO-92 package, facilitating easy through-hole mounting on printed circuit boards. Its robust construction provides a maximum power dissipation of 800 mW and can reliably operate up to 150°C, delivering excellent thermal performance.

The device features a minimum DC current gain (hFE) of 40, ensuring effective transistor switching characteristics, and a maximum transition frequency of 1 MHz, suitable for low-frequency signal amplification and switching. It maintains a maximum collector-base voltage of 80 V and an emitter-base voltage of 8 V, which contributes to its versatility in a wide range of circuit designs.

Typical applications include signal amplification, switching in consumer electronics, and prototype experimental circuits in laboratories. Its compact size with a height of 19.05 mm, length of 5.2 mm, and width of 4.19 mm allows integration into space-constrained designs.

This transistor complies with standard industrial requirements but has no specific certifications or automotive grades, making it ideal for commercial and general electronic component needs.

Supports maximum DC collector current of 700 mA. Collector-emitter voltage rating of up to 60 V. Emitter-base voltage maximum of 8 V. Power dissipation rated at 800 mW. Minimum DC current gain (hFE) of 40 to ensure reliable switching.

Maximum operating frequency of 1 MHz suitable for low-frequency applications. Compact TO-92 through-hole package with 3 pins for easy PCB mounting. Maximum operating temperature of 150°C for industrial and commercial use.

Dimensions approximately 19.05 mm height, 5.2 mm length, and 4.19 mm width. Single transistor configuration with NPN polarity optimized for switching circuits.

Choose onsemi KSC1008CYTA for reliable performance in electronic circuits requiring moderate current and voltage handling with small size and easy PCB integration. Explore more Bipolar Transistors and semiconductor devices at EnvMart to meet diverse industrial and laboratory needs.

onsemi Small Signal NPN Transistor 700 mA 60 V TO-92 3-Pin KSC1008CYTA
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