onsemi Small Signal NPN Transistor 600 mA 160 V 3-Pin TO-92 2N5551TF

onsemi 2N5551TF is a small signal NPN bipolar junction transistor (BJT) ideal for various semiconductor applications including amplification and switching in electronic circuits. Featuring a maximum collector current of 600 mA and collector-emitter voltage of 160 V, this transistor efficiently handles moderate power and voltage levels.

The transistor is housed in a compact TO-92 package designed for through-hole mounting, facilitating easy installation on PCBs. It supports a maximum power dissipation of 625 mW and can operate reliably within a temperature range of -55°C to 150°C, making it suitable for diverse environments.

The device offers a minimum DC current gain (hFE) of 80 and a maximum transition frequency of 100 MHz, providing good frequency response capabilities for switching and amplification.

With three pins, standard NPN transistor polarity, and a small form factor, it is ideal for use in consumer electronics, industrial electronics, laboratory prototype development, and other general electronic applications.

TO-92 package type with through-hole mount. Maximum collector current of 600 mA and collector-emitter voltage of 160 V. Power dissipation capacity of 625 mW for moderate power circuits. Operates within a temperature range of -55°C to 150°C.

Suitable for general purpose amplification and switching. High transition frequency of 100 MHz for fast switching. Compact dimensions: 18.33 mm height, 5.2 mm length, 4.19 mm width.

This transistor is widely employed in electronic components manufacturing, design prototyping, educational projects, HVAC control circuits, and automotive electronics where a robust small signal NPN transistor is required.

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