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Taiwan Semiconductor Uni-Directional 1-Element TVS Diode 600 W Peak Pulse Power 2-Pin DO-214 SMBJ54A

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Taiwan Semiconductor Uni-Directional 1-Element TVS Diode 600 W Peak Pulse Power 2-Pin DO-214 SMBJ54A

Name: Taiwan Semiconductor Uni-Directional 1-Element TVS Diode 600 W Peak Pulse Power 2-Pin DO-214 SMBJ54A
Brand: Taiwan Semiconductor
SKU: 373490
Price: 0.17 USD
Availability: InStock

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Category TVS Diode Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin	India
Brand	Taiwan Semiconductor
Height	2.45mm
Length	4.75mm
Model	SMBJ54A
Width	3.95mm
Mount Type	Surface
Series	SMBJ
Maximum Operating Temperature	150°C
Package Type	DO-214
Minimum Operating Temperature	-55°C
Standards/Approvals	FBI
Pin Count	2
Number of Elements per Chip	1
Clamping Voltage VC	87.1V
Diode Configuration	Single
Direction Type	Uni-Directional
Minimum Breakdown Voltage Vbr	60V
Maximum Reverse Stand-off Voltage Vwm	54V
Peak Pulse Power Dissipation Pppm	600W
Test Current It	1mA
Maximum Peak Pulse Current Ippm	6.9A
Maximum Reverse Leakage Current	5μA

Key Features

This diode features a single-element configuration with uni-directional operation for effective voltage clamping.
Has a minimum breakdown voltage of 60 V and a maximum reverse standoff voltage of 54 V.
Clamping voltage is rated at 87.1 V and maximum peak pulse current is 6.9 A, suitable for surge protection.
Operates safely in the temperature range -55°C to 150°C, supporting demanding industrial environments.
Maximum reverse leakage current is 5 μA ensuring low leakage in normal conditions.
Designed to meet FBI standards and has a robust glass-passivated junction for durability.
Ideal for electronic and electrical semiconductor applications requiring fast transient voltage suppression.

Product Description

Taiwan Semiconductor SMBJ54A Uni-Directional 1-Element TVS Diode provides transient voltage suppression with a peak pulse power dissipation of 600 W. Packaged in a DO-214 2-pin surface mount configuration, it ensures reliable protection against voltage spikes in electronic circuits.

This diode features a single-element diode configuration that operates uni-directionally, offering precise voltage clamp at a minimum breakdown voltage of 60 V. The maximum reverse standoff voltage is 54 V, which allows it to withstand normal operating voltages without conducting.

The device has a clamping voltage of 87.1 V and supports a maximum peak pulse current of 6.9 A, allowing it to absorb surge energy effectively and protect sensitive electronic components. Its low maximum reverse leakage current of 5 μA preserves efficiency and reduces power loss.

With compact dimensions of 4.75 mm length, 3.95 mm width, and 2.45 mm height, this TVS diode is well suited for surface mount technology assemblies, aiding in space-saving PCB designs. It operates reliably within a temperature range of -55°C to 150°C, making it suitable for industrial, commercial, and automotive electronics application environments.

The diode is glass-passivated, enhancing its thermal stability and durability. It complies with FBI standards and is classified under the SMBJ series, trusted for surge and transient voltage suppression in power management and protection circuits.

Uni-Directional 1-element diode configuration for quick surge response. High peak pulse power rating of 600 W for robust transient absorption. Surface mount DO-214 package for compact circuit integration. Wide operating temperature range from -55°C to 150°C.

Low leakage current minimizes power loss during operation. Compact physical dimensions allow ease of PCB layout. Compliant with FBI standards ensuring quality and reliability. Ideal for use in industrial, electrical, telecommunications, and consumer electronics protection circuits.

For high-quality semiconductor devices for transient voltage suppression, explore further products and technical documents available on EnvMart. Enhance your design with reliable TVS Diodes like the SMBJ54A model from Taiwan Semiconductor.