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onsemi Silicon Junction Switching Diode, Single, 3 A, 2-Pin, 800 V, DO-41 Package 1N5407RLG

Category Switching Diodes Brand onsemi Condition New

Specifications

Country of Origin India
Diameter 5.3mm
Brand onsemi
Height 9.5mm
Length 9.5mm
Model 1N5407RLG
Width 5.3mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type DO-41
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 200A
Maximum Forward Voltage Vf 1V
Maximum Forward Current If 3A
Maximum Peak Reverse Repetitive Voltage Vrrm 800V

Key Features

  • Single silicon junction diode suitable for power rectification applications.
  • Maximum forward current rating of 3 amperes ensures reliable operation under high load.
  • Supports peak reverse repetitive voltage of 800 volts for robust voltage withstand capability.
  • DO-41 through-hole package with 2 pins facilitates easy PCB mounting and handling.
  • Wide operating temperature range from -65°C to +150°C for diverse environmental conditions.
  • Peak non-repetitive forward surge current capability of 200 amperes for transient voltage spikes.
  • Compact dimensions with length and height of 9.5 mm and diameter/width of 5.3 mm.
  • No automotive or special standards approvals; suitable for general purpose industrial electronics.

Product Description

onsemi 1N5407RLG is a silicon junction switching diode built for reliable power rectification in electronic circuits requiring a maximum forward current of 3 A. Featuring a DO-41 through-hole package with 2 pins, it provides ease of mounting on printed circuit boards, suitable for industrial, laboratory, and electronic manufacturing applications.

This diode supports a maximum peak reverse repetitive voltage (VRRM) of 800 V ensuring adequate protection against high voltage transients. Its robust design allows operation in a wide temperature range from -65°C to +150°C, making it ideal for harsh environmental conditions encountered in commercial and industrial electronics.

The device can withstand a peak non-repetitive forward surge current up to 200 A, providing strong transient tolerance for surge events in power rectification circuits. The forward voltage drop is limited to 1 V, minimizing conduction losses and enhancing efficiency in power management applications.

Physical construction dimensions include a length and height of 9.5 mm and a diameter and width of 5.3 mm, offering a compact footprint compatible with space-constrained designs. While this product is not automotive grade and carries no special approvals, it is widely used in switching applications that require robust performance and reliability.

Typical industrial use cases include power supply rectification, switching diodes in electronic devices, signal demodulation, and general semiconductor component applications across electronics manufacturing, testing, repair, and prototyping.

Single silicon junction diode suitable for power rectification applications. Maximum forward current rating of 3 amperes ensures reliable operation under high load. Supports peak reverse repetitive voltage of 800 volts for robust voltage withstand capability.

DO-41 through-hole package with 2 pins facilitates easy PCB mounting and handling. Wide operating temperature range from -65°C to +150°C for diverse environmental conditions. Peak non-repetitive forward surge current capability of 200 amperes for transient voltage spikes.

Compact dimensions with length and height of 9.5 mm and diameter/width of 5.3 mm. No automotive or special standards approvals; suitable for general purpose industrial electronics. Maximum forward voltage drop of 1 volt reduces power losses in conduction state.

Explore the full range of Switching Diodes and semiconductor devices on EnvMart for high-quality components from onsemi and other leading manufacturers.

onsemi Silicon Junction Switching Diode, Single, 3 A, 2-Pin, 800 V, DO-41 Package 1N5407RLG
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Frequently Asked Questions

The maximum forward current rating of this diode is 3 amperes, ensuring reliable operation under high load conditions.

This model supports a peak reverse repetitive voltage of 800 volts, providing robust voltage withstand capability.

The dimensions of the DO-41 package include a length and height of 9.5 mm and a diameter/width of 5.3 mm.

It operates within a wide temperature range from -65°C to +150°C, making it suitable for diverse environmental conditions.

The diode can withstand a peak non-repetitive forward surge current of up to 200 amperes, providing strong transient tolerance for surge events.

This model features a DO-41 through-hole package with 2 pins, facilitating easy PCB mounting and handling.

The maximum forward voltage drop is limited to 1 volt, which helps minimize conduction losses and enhance efficiency.

It is suitable for power supply rectification, switching applications in electronic devices, and general semiconductor component applications.

This diode has a pin count of 2, consistent with its DO-41 package design.

The country of origin for this silicon junction diode is India.

This product does not carry any automotive or special standards approvals and is suitable for general purpose industrial electronics.

The sub-type of this diode is a silicon junction, specifically designed for switching applications.

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