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Nexperia N-Channel MOSFET 90 A 40 V Enhancement 4-Pin SOT-669 PSMN5R8-40YS,115
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 5mm |
| Model | PSMN5R8-40YS,115 |
| Width | 4.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-669 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 90A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 7.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 89W |
| Typical Gate Charge Qg @ Vgs | 28.8nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- This MOSFET features a low 7.7 milliohm drain-source resistance for efficient switching.
- It uses enhancement mode channel technology for reliable operation.
- The device is packaged in a compact 4-pin SOT-669 package.
- Operating temperature ranges from -55°C to 175°C for diverse applications.
- Maximum power dissipation is rated at 89 W ensuring high power handling.
- Gate-source voltage tolerance is ±20 V for strong gate control.
- Typical gate charge is 28.8 nC, enabling fast switching speeds.
- Originating from the Philippines, it meets industrial and electronic component standards.
Product Description
Nexperia PSMN5R8-40YS,115 is a high-performance N-Channel MOSFET designed for surface-mount applications requiring robust power management. It delivers a maximum continuous drain current of 90 A and a drain-source voltage rating of 40 V. Packaged in the compact SOT-669 4-pin form factor, this MOSFET offers efficient switching with a low maximum drain-source resistance of 7.7 milliohms.
Operating safely across a wide temperature range from -55°C to 175°C, it is suitable for industrial, manufacturing, power electronics, and automotive applications where reliable power switching and dissipation up to 89 W is essential. The enhancement mode channel ensures stable operation under varying load conditions. Its maximum gate-source voltage of ±20 V and typical gate charge of 28.8 nC facilitate fast and responsive gate control for switching circuits.
This product is manufactured in the Philippines and complies with international semiconductor quality expectations although no explicit standards approvals are listed. Suitable for high-current electronic circuits, power supplies, motor controls, and related fields, it is optimized for integration into surface-mount printed circuit boards.
This MOSFET provides a maximum continuous drain current of 90 A. The maximum drain-source voltage is 40 V for reliable device protection. Low on-resistance (7.7 milliohms) ensures minimal power loss during conduction. It is supplied in a compact 4-pin SOT-669 surface-mount package.
Wide operating temperature range from -55°C to 175°C accommodates harsh conditions. Maximum power dissipation rating is 89 W, supporting high power designs. Gate-source voltage tolerance of ±20 V supports stable switching control.
Typical gate charge of 28.8 nC enables efficient switching performance. Manufactured in the Philippines, ensuring quality and traceability. Explore the broad range of Nexperia discrete semiconductors and MOSFETs at EnvMart for industrial, electronics manufacturing, and power management needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 90 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
It features a low maximum drain-source resistance of 7.7 milliohms.
The typical gate charge is 28.8 nC, allowing for efficient switching performance.
It operates safely across a wide temperature range from -55°C to 175°C.
This model is packaged in a compact 4-pin SOT-669 surface-mount package.
The maximum power dissipation rating is 89 W, supporting high power designs.
It has a gate-source voltage tolerance of ±20 V, which supports stable switching control.
This model utilizes enhancement mode channel technology for reliable operation.
The dimensions are 5 mm in length, 4.1 mm in width, and 1.1 mm in height.
It is suitable for high-current electronic circuits, power supplies, motor controls, and related fields.
This MOSFET is manufactured in the Philippines, ensuring quality and traceability.
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