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Nexperia N-Channel MOSFET 100 A 30 V Enhancement Mode 3-Pin TO-220 PSMN4R3-30PL,127

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin Philippines
Brand Nexperia
Height 16mm
Length 10.3mm
Model PSMN4R3-30PL,127
Width 4.7mm
Mount Type Through Hole
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 100A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 4.3mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 103W
Typical Gate Charge Qg @ Vgs 41.5nC
Maximum Gate Source Voltage Vgs -20, +20V

Key Features

  • The device supports a maximum continuous drain current of 100 A.
  • It has a maximum drain-source voltage of 30 V suitable for low voltage circuits.
  • Package type is TO-220 with through hole mounting, providing easy installation.
  • Features an enhancement mode channel and a typical gate charge of 41.5 nC at Vgs.
  • Maximum power dissipation is rated at 103 W for robust thermal handling.
  • Operational temperature range from -55°C to 175°C allows use in harsh environments.
  • Maximum gate-source voltage is between -20 V and +20 V for safe gate driving.
  • Designed and manufactured in the Philippines ensuring high quality standards.

Product Description

Nexperia PSMN4R3-30PL,127 is a high-performance N-Channel MOSFET transistor designed for power management and switching applications in electronic circuits. With a maximum continuous drain current of 100 A and a voltage rating of 30 V, it is well-suited for efficient conduction and fast switching in power electronics.

This MOSFET features an enhancement mode channel operation and is housed in a TO-220 package with a through hole mount type, facilitating easy integration into printed circuit boards. Its 3-pin configuration supports reliable connectivity and electrical performance.

The typical gate charge of 41.5 nC at specified gate-source voltage ensures low switching losses, enhancing power efficiency. A maximum power dissipation rating of 103 W enables the device to handle significant thermal loads in demanding environments.

It operates effectively in a wide temperature range from -55°C to 175°C, making it suitable for automotive, industrial, and commercial electronic applications where temperature resilience is critical.

The robust physical dimensions of length 10.3 mm, width 4.7 mm, and height 16 mm provide a compact footprint that saves space in device assemblies. The device supports a maximum continuous drain current of 100 A. Maximum drain-source voltage of 30 V ensures suitability for low voltage power control.

TO-220 package with through hole mount allows for sturdy mechanical and electrical connection. Enhancement mode operation with a typical gate charge of 41.5 nC reduces switching losses. High maximum power dissipation rating of 103 W provides reliable thermal performance.

Wide operating temperature range from -55°C to 175°C ensures use in various environments. Maximum gate-source voltage range from -20 V to +20 V protects gate circuits. Compact size with length 10.3 mm, width 4.7 mm, and height 16 mm.

Manufactured in the Philippines following rigorous quality standards.

This Nexperia MOSFET is ideal for industrial power control, automotive electronics, power supplies, and circuit protection systems. Its combination of high current capacity, voltage rating, and thermal tolerance enables reliable operation in a broad range of demanding applications.

Explore the Electronics & Electricals category at EnvMart for a wide selection of discrete semiconductor devices and MOSFETs for your power management needs.

Nexperia N-Channel MOSFET 100 A 30 V Enhancement Mode 3-Pin TO-220 PSMN4R3-30PL,127
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Frequently Asked Questions

The maximum continuous drain current for this model is 100 A.

The maximum drain-source voltage rating is 30 V, making it suitable for low voltage circuits.

The typical gate charge at the specified gate-source voltage is 41.5 nC.

This model has a maximum power dissipation rating of 103 W, allowing it to handle significant thermal loads.

The operating temperature range is from -55°C to 175°C, suitable for harsh environments.

It uses a TO-220 package with through hole mounting, facilitating easy installation.

The dimensions are 10.3 mm in length, 4.7 mm in width, and 16 mm in height.

The maximum gate-source voltage is between -20 V and +20 V, providing safe gate driving.

This device features an N-channel type with enhancement mode operation.

The maximum drain-source resistance is rated at 4.3 mΩ, ensuring efficient conduction.

This model is manufactured in the Philippines, adhering to high quality standards.

It is suitable for industrial power control, automotive electronics, power supplies, and circuit protection systems.

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