Nexperia N-Channel MOSFET, 100 A, 25 V Enhancement Mode, 4-Pin SOT-669 Package PSMN0R9-25YLC,115

The Nexperia PSMN0R9-25YLC,115 is a high-performance N-Channel MOSFET designed for power switching and amplification applications in electronics and electrical systems. This enhancement mode transistor supports a continuous drain current of up to 100 amperes, enabling robust conduction performance in demanding circuits.

The MOSFET is rated for a maximum drain-source voltage of 25 volts, making it suitable for low-voltage power applications and efficient energy management.

The device's low on-resistance of 1.25 milliohms reduces conduction losses and improves thermal efficiency during operation, which is critical for high-current switching applications.

Packaged in a compact 4-pin SOT-669 surface mount package, it provides a space-saving solution suitable for industrial electronics, power supplies, and motor control circuits.

Capable of handling maximum power dissipation of 272 watts, this MOSFET delivers reliable operation over a wide temperature range from -55°C to 175°C, meeting the demands of harsh and variable industrial environments.

The gate-source voltage range of ±20 volts ensures robust switching control and drives the MOSFET safely without damage. With a typical gate charge of 110 nanocoulombs, the device features fast switching characteristics suitable for high-frequency applications.

Comprehensive package dimensions of 5 mm length, 4.1 mm width, and 1.1 mm height allow integration in compact designs.

This Nexperia MOSFET is ideal for use in industrial automation, power management, consumer electronics, automotive electronics (non-automotive standard compliant), HVAC equipment, and general electronic circuit design.

This enhancement mode MOSFET supports a maximum continuous drain current of 100 amperes. It operates with a maximum drain-source voltage rating of 25 volts. The device features a low drain-source resistance of 1.25 milliohms ensuring efficient power conduction.

It is designed for surface mounting with a 4-pin configuration in a compact SOT-669 package. The MOSFET can withstand power dissipation up to 272 watts for reliable performance. It can operate safely within an ambient temperature range from -55°C to 175°C.

The maximum gate-source voltage tolerance is ±20 volts for robust driving capability. The device exhibits a typical gate charge of 110 nanocoulombs at standard gate voltages. Package dimensions include length of 5 mm, width of 4.1 mm, and height of 1.1 mm.

Explore the extensive range of semiconductor components in the MOSFET category at EnvMart for your industrial and electronic engineering requirements.