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Taiwan Semiconductor NPN Transistor 100 mA, 65 V, 3-Pin TO-92 BC546A A1

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Taiwan Semiconductor NPN Transistor 100 mA, 65 V, 3-Pin TO-92 BC546A A1

Name: Taiwan Semiconductor NPN Transistor 100 mA, 65 V, 3-Pin TO-92 BC546A A1
Brand: Taiwan Semiconductor
SKU: 372440
Price: 0.1 USD
Availability: InStock

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Category Bipolar Transistors Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin	Taiwan
Brand	Taiwan Semiconductor
Height	4.7mm
Length	5.1mm
Model	BC546A A1
Width	4.1mm
Mount Type	Through Hole
Series	BC546
Maximum Operating Temperature	150°C
Package Type	TO-92
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	65V
Minimum DC Current Gain hFE	220
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	80V
Maximum Power Dissipation Pd	500mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Single

Key Features

High gain NPN bipolar transistor suitable for small signal amplification.
Maximum DC collector current of 100 mA ensures moderate power handling.
65 V maximum collector-emitter voltage supports a wide range of electronic applications.
Through hole mount type with a durable TO-92 package.
Operating temperature range from -65°C to 150°C ensures reliable performance in varying conditions.
Minimum DC current gain (hFE) of 220 provides efficient transistor operation.
Compact dimensions measuring approximately 5.1 mm in length and 4.1 mm width.
Manufactured in Taiwan with consistent quality standards.

Product Description

Taiwan Semiconductor BC546A A1 is a high-performance NPN bipolar junction transistor designed for low-level amplification and switching applications. It features a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 65 V, making it suitable for small signal electronic circuits in industrial, consumer electronics, and instrumentation.

Housed in a compact 3-pin TO-92 package for through-hole mounting, this transistor offers versatile application in prototyping and production environments where reliable switching or amplification is required. With a minimum DC current gain (hFE) of 220, it ensures efficient current control with low distortion. The transistor can operate in temperatures ranging from -65°C to 150°C, making it robust for harsh environments including automotive and industrial controls.

This bipolar transistor is ideal for use in control circuits, amplification stages, signal processing, and switching devices in electronic and electrical engineering applications. Its pin configuration and size comply with standard footprints, simplifying PCB layout and assembly.

High gain NPN bipolar transistor suitable for small signal amplification. Maximum DC collector current of 100 mA ensures moderate power handling capacity. Maximum collector-emitter voltage of 65 V supports diverse circuit designs.

Through hole mounting with TO-92 package ensures ease of installation. Wide operating temperature range from -65°C to 150°C guarantees durability in various environments. Minimum DC current gain (hFE) value of 220 delivers effective transistor performance.

Compact dimensions: 5.1 mm length, 4.1 mm width, and 4.7 mm height. Manufactured in Taiwan, reflecting quality semiconductor standards.

This transistor is widely used in electronic circuit design, industrial controls, instrumentation, and consumer electronics. EnvMart offers this component for engineers and manufacturers looking for reliable discrete semiconductor solutions.

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