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onsemi PNP Bipolar Transistor BC807-25LT1G, 500 mA, 45 V, 3-Pin SOT-23 Surface Mount

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 1.11mm
Length 3.04mm
Model BC807-25LT1G
Width 1.4mm
Mount Type Surface
Series BC807-25L
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 160
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -500mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
Nexperia Transistor, -500 mA PNP, -45 V, 3-Pin SOT-23Brand Nexperia

Key Features

  • Supports a maximum collector current of 500 mA ensuring robust performance.
  • Maximum collector-emitter voltage of 45 V suitable for medium voltage applications.
  • Packaged in compact 3-pin SOT-23 surface mount for space-saving design.
  • High DC current gain with minimum hFE of 160 for efficient switching.
  • Maximum power dissipation of 300 mW supporting moderate power requirements.
  • Automotive grade standard AEC-Q101 rated for reliable automotive applications.
  • Maximum operating temperature up to 150°C ensuring durability under thermal stress.
  • Designed for protection circuits including ESD, polarity reversal, and inductive load protection.

Product Description

onsemi BC807-25LT1G PNP Bipolar Transistor is a reliable and efficient semiconductor device designed for use in linear and switching electronic applications. Housed in a 3-pin SOT-23 surface mount package, it is ideal for compact PCB designs requiring robust performance.

This device supports a maximum collector current of 500 mA and a maximum collector-emitter voltage of 45 V, making it suitable for medium voltage circuits. The transistor offers a high minimum DC current gain (hFE) of 160 and a maximum power dissipation of 300 mW, ensuring efficient switching and reliable operation.

Designed according to automotive standard AEC-Q101, this transistor is qualified for automotive and other demanding environments, guaranteeing long-term durability and thermal stability up to 150°C. Its features also include built-in protections such as Electrostatic Discharge (ESD), polarity reversal, and inductive load protection which enhance circuit resilience.

The compact dimensions (3.04 mm length, 1.4 mm width, and 1.11 mm height) allow for space-efficient PCB layouts. It is surface-mounted to facilitate automated assembly processes.

Typical applications include ESD protection circuits, polarity reversal protection, steering logic functions, and inductive load handling in automotive, industrial, and consumer electronics.

The product is manufactured in China, ensuring consistent quality standards. Supports a maximum collector current of 500 mA ensuring robust performance. Maximum collector-emitter voltage of 45 V suitable for medium voltage applications.

Packaged in compact 3-pin SOT-23 surface mount for space-saving design. High DC current gain with minimum hFE of 160 for efficient switching. Maximum power dissipation of 300 mW supporting moderate power requirements. Automotive grade standard AEC-Q101 rated for reliable automotive applications.

Maximum operating temperature up to 150°C ensuring durability under thermal stress. Designed for protection circuits including ESD, polarity reversal, and inductive load protection. Compact dimensions: Length 3.04 mm, Width 1.4 mm, Height 1.11 mm for PCB integration.

Explore more high-quality semiconductor devices and discrete transistors in the Electronics & Electricals category at EnvMart for your industrial and commercial projects.

Explore more products in our Bipolar Transistors category.

onsemi PNP Bipolar Transistor BC807-25LT1G, 500 mA, 45 V, 3-Pin SOT-23 Surface Mount
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Frequently Asked Questions

The maximum collector current for this model is 500 mA, ensuring robust performance in various applications.

The BC807-25LT1G supports a maximum collector-emitter voltage of 45 V, making it suitable for medium voltage applications.

This model is packaged in a compact 3-pin SOT-23 surface mount configuration, ideal for space-saving designs.

The minimum DC current gain (hFE) for the BC807-25LT1G is 160, which supports efficient switching operations.

This transistor has a maximum power dissipation of 300 mW, accommodating moderate power requirements.

The BC807-25LT1G can operate at a maximum temperature of 150°C, ensuring durability under thermal stress.

This transistor is designed according to the automotive standard AEC-Q101, ensuring reliability in automotive applications.

The dimensions of this model are 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height.

This transistor is designed for protection circuits including ESD, polarity reversal, and inductive load protection.

The maximum transition frequency for this model is 100 MHz, suitable for high-speed applications.

The BC807-25LT1G features a single transistor configuration, making it versatile for various circuit designs.

The BC807-25LT1G is manufactured in China, adhering to consistent quality standards.

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