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STMicroelectronics STripFET F3 N-Channel MOSFET 80 A 55 V Enhancement 3-Pin TO-252 STD65N55F3
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD65N55F3 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | STripFET F3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 8.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 33.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Designed for surface mount applications with TO-252 package type.
- Low on-resistance of 8.5 milliohms for efficient power management.
- Features enhancement mode channel operation for precise control.
- Operates efficiently within a temperature range of -55°C to 175°C.
- Maximum power dissipation of 110 W suitable for high power industrial use.
- Maximum gate source voltage of ±20 V to ensure reliability.
- Typical gate charge of 33.5 nC allows fast switching performance.
- Complies with automotive standard AEC-Q101 for quality assurance.
Product Description
STMicroelectronics STD65N55F3 STripFET F3 N-Channel MOSFET is engineered for high performance in power electronic applications requiring up to 80 A continuous drain current and a maximum drain-to-source voltage of 55 V. Packaged in a space-saving 3-pin TO-252 surface mount package, this MOSFET offers ultra-low on-resistance of 8.5 milliohms, improving energy efficiency in switching and power regulation circuits.
The device features enhancement mode channel operation, enabling precise and stable control of conduction. With a maximum gate-to-source voltage rating of ±20 V, it assures robust performance and durability in demanding industrial environments.
STripFET F3 technology reduces the typical gate charge to 33.5 nanocoulombs, facilitating fast switching with low losses, making this MOSFET suitable for applications such as power supplies, motor control, and automotive electronics.
Capable of dissipating up to 110 watts of power and operating within a wide temperature range from -55°C to 175°C, it is reliable for both commercial and automotive use. The MOSFET complies with the automotive standard AEC-Q101, providing confidence in high-reliability environments.
Compact physical dimensions of 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height allow integration into densely packed circuit designs. Its surface mount type eases assembly and optimizes PCB real estate.
Designed for surface mount applications with TO-252 package type. Low on-resistance of 8.5 milliohms for efficient power management. Features enhancement mode channel operation for precise control. Operates efficiently within a temperature range of -55°C to 175°C.
Maximum power dissipation of 110 W suitable for high power industrial use. Maximum gate source voltage of ±20 V to ensure reliability. Typical gate charge of 33.5 nC allows fast switching performance. Compact dimensions: length 6.6 mm, width 6.2 mm, height 2.4 mm.
Complies with automotive standard AEC-Q101 for quality assurance.
This MOSFET is ideal for use in industrial power management, automotive electronics, manufacturing systems, and other applications requiring high current and voltage handling capabilities. Explore the Electronics & Electricals category at EnvMart for additional STMicroelectronics components and innovative semiconductor solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 80 A.
This MOSFET has a maximum drain-to-source voltage of 55 V.
The on-resistance is 8.5 milliohms, which contributes to efficient power management.
It operates efficiently within a temperature range of -55°C to 175°C.
The typical gate charge is 33.5 nanocoulombs, allowing for fast switching performance.
This model is packaged in a 3-pin TO-252 surface mount type.
The maximum power dissipation is 110 W, suitable for high power industrial use.
It complies with the automotive standard AEC-Q101 for quality assurance.
The dimensions are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
It features an enhancement mode N-channel for precise control.
The maximum gate-to-source voltage rating is ±20 V, ensuring reliability.
This MOSFET is suitable for applications such as power supplies, motor control, and automotive electronics.
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