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STMicroelectronics DeepGate STripFET N-Channel MOSFET 5 A 60 V Enhancement 8-Pin SOIC STS5NF60L

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 1.65mm
Length 5mm
Model STS5NF60L
Width 4mm
Mount Type Surface
Series DeepGate, STripFET
Maximum Operating Temperature 150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 5A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 55mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.5W
Typical Gate Charge Qg @ Vgs 17nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Features an 8-pin SOIC surface mount package for compact PCB integration.
  • Enhancement mode channel enables efficient switching performance.
  • Maximum drain-source resistance of 55 milliohm reduces conduction losses.
  • Operates temperature range from -55°C to 150°C for robust applications.
  • Typical gate charge of 17 nC at gate-source voltage ensures fast switching.
  • Maximum power dissipation of 2.5 W supports moderate power applications.
  • Forward voltage of 1.2 V for efficient conduction.
  • Designed with STMicroelectronics' DeepGate, STripFET technology for superior performance.

Product Description

STMicroelectronics STS5NF60L DeepGate STripFET N-Channel MOSFET is a high-performance discrete semiconductor device designed for efficient switching and power management in electronic circuits. It features a maximum continuous drain current of 5 amperes and a maximum drain-source voltage of 60 volts, making it suitable for various industrial, automotive, and consumer electronic applications.

Housed in a compact 8-pin SOIC surface-mount package, this MOSFET operates in enhancement mode, offering ultra-low gate charge of 17 nanocoulombs and low on-resistance of 55 milliohms. Its power dissipation capability of 2.5 watts and wide operating temperature range from -55°C to 150°C make it reliable for harsh environments and demanding industrial use cases.

The STS5NF60L also features a maximum gate-source voltage rating of ±20 V and a forward voltage drop of 1.2 V, providing robust operation within standard electronic power circuits. The device’s DeepGate, STripFET technology provides optimized performance with reduced switching losses and enhanced efficiency.

This MOSFET is ideal for applications such as power supplies, motor control circuits, lighting controls, and electronic load switching in industrial, manufacturing, and automotive sectors.

Features an 8-pin SOIC surface mount package for compact PCB integration. Enhancement mode channel enables efficient switching performance. Maximum drain-source resistance of 55 milliohm reduces conduction losses. Operates temperature range from -55°C to 150°C for robust applications.

Typical gate charge of 17 nC at gate-source voltage ensures fast switching. Maximum power dissipation of 2.5 W supports moderate power applications. Forward voltage of 1.2 V for efficient conduction. Designed with STMicroelectronics' DeepGate, STripFET technology for superior performance.

STMicroelectronics products are renowned for quality and reliability in semiconductor devices. Explore the Electronics & Electricals category on EnvMart for a wide range of discrete semiconductors and MOSFET components to suit your design and manufacturing needs.

STMicroelectronics DeepGate STripFET N-Channel MOSFET 5 A 60 V Enhancement 8-Pin SOIC STS5NF60L
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Frequently Asked Questions

The maximum continuous drain current for this model is 5 amperes.

This MOSFET has a maximum drain-source voltage rating of 60 volts.

The typical gate charge for the STS5NF60L at gate-source voltage is 17 nanocoulombs.

The maximum power dissipation capability of this unit is 2.5 watts.

It operates within a temperature range from -55°C to 150°C.

The maximum gate-source voltage rating is ±20 volts.

The forward voltage drop for the STS5NF60L is 1.2 volts.

It comes in an 8-pin SOIC surface mount package.

The maximum drain-source resistance is 55 milliohms.

This model uses a surface mount type for installation.

It features an N-channel type for its operation.

The STS5NF60L is suitable for applications such as power supplies, motor control circuits, and electronic load switching.

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