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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 1.65mm |
| Length | 5mm |
| Model | STS5NF60L |
| Width | 4mm |
| Mount Type | Surface |
| Series | DeepGate, STripFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 55mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
STMicroelectronics STS5NF60L DeepGate STripFET N-Channel MOSFET is a high-performance discrete semiconductor device designed for efficient switching and power management in electronic circuits. It features a maximum continuous drain current of 5 amperes and a maximum drain-source voltage of 60 volts, making it suitable for various industrial, automotive, and consumer electronic applications.
Housed in a compact 8-pin SOIC surface-mount package, this MOSFET operates in enhancement mode, offering ultra-low gate charge of 17 nanocoulombs and low on-resistance of 55 milliohms. Its power dissipation capability of 2.5 watts and wide operating temperature range from -55°C to 150°C make it reliable for harsh environments and demanding industrial use cases.
The STS5NF60L also features a maximum gate-source voltage rating of ±20 V and a forward voltage drop of 1.2 V, providing robust operation within standard electronic power circuits. The device’s DeepGate, STripFET technology provides optimized performance with reduced switching losses and enhanced efficiency.
This MOSFET is ideal for applications such as power supplies, motor control circuits, lighting controls, and electronic load switching in industrial, manufacturing, and automotive sectors.
Features an 8-pin SOIC surface mount package for compact PCB integration. Enhancement mode channel enables efficient switching performance. Maximum drain-source resistance of 55 milliohm reduces conduction losses. Operates temperature range from -55°C to 150°C for robust applications.
Typical gate charge of 17 nC at gate-source voltage ensures fast switching. Maximum power dissipation of 2.5 W supports moderate power applications. Forward voltage of 1.2 V for efficient conduction. Designed with STMicroelectronics' DeepGate, STripFET technology for superior performance.
STMicroelectronics products are renowned for quality and reliability in semiconductor devices. Explore the Electronics & Electricals category on EnvMart for a wide range of discrete semiconductors and MOSFET components to suit your design and manufacturing needs.
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