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onsemi Transistor 900 mA NPN 40 V 3-Pin SOT-23 MMBT3904LT3G

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onsemi Transistor 900 mA NPN 40 V 3-Pin SOT-23 MMBT3904LT3G

Name: onsemi Transistor 900 mA NPN 40 V 3-Pin SOT-23 MMBT3904LT3G
Brand: onsemi
SKU: 371653
Price: 0.03 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	2.64mm
Length	3.04mm
Model	MMBT3904LT3G
Width	1.4mm
Mount Type	Surface
Series	MMBT3904L
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	40V
Minimum DC Current Gain hFE	30
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	60V dc
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	300mW
Maximum DC Collector Current Idc	900mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

This transistor is designed for linear and switching applications requiring single NPN configuration.
Maximum DC collector current is 900 mA with a collector-emitter voltage rating of 40 V.
It supports a maximum collector base voltage of 60 V dc and has a emitter base voltage maximum of 6 V.
The device dissipates up to 300 mW of power and features a minimum DC current gain (hFE) of 30.
Operating temperature ranges from -55°C to 150°C, enabling use in diverse industrial environments.
The transistor has a maximum transition frequency of 100 MHz for fast switching capabilities.
Compact dimensions of 3.04 mm length, 2.64 mm height, and 1.4 mm width support surface mounting.
Automotive standard qualified to AEC-Q101 ensures reliability in automotive electronics.

Product Description

onsemi's MMBT3904LT3G is a high-quality NPN bipolar transistor designed for both linear and switching use cases in diverse electronics applications. It is housed in a compact 3-pin SOT-23 surface mount package, making it suitable for space-constrained circuit assemblies.

This transistor can handle a maximum DC collector current of 900 mA, and a maximum collector-emitter voltage of 40 V, providing robust performance in signal amplification or switching circuits.

With a collector base voltage rating of 60 V and emitter base voltage max of 6 V, the device offers stable operation under varying electrical loads. Maximum power dissipation is rated at 300 mW, enabling efficient thermal management in compact PCB layouts.

The transition frequency of 100 MHz ensures this transistor supports high-speed switching applications, suitable for communications, automotive, and industrial electronics.

Operating temperature range from -55°C to 150°C confirms its suitability for challenging environments including automotive and industrial sectors. The product is also compliant with AEC-Q101, assuring automotive-grade quality and reliability.

Physical package dimensions include a length of 3.04 mm, width of 1.4 mm, and height of 2.64 mm to fit modern miniature PCB footprints. This transistor is a reliable component for various industrial, automotive, broadcast, and consumer electronics manufacturing needs.

Use cases include signal amplification, switching operations, and power control modules where space and efficiency are critical. MMBT3904LT3G's adherence to stringent automotive standards aligns with production requirements for automotive electronic control units and sensor interfaces.

EnvMart invites engineers and purchasing professionals to explore our wide range of discrete semiconductors including Bipolar Transistors like the MMBT3904LT3G from onsemi to fulfill demanding technical and commercial requirements with confidence.