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| Country of Origin | Malaysia |
|---|---|
| Brand | onsemi |
| Height | 1.75mm |
| Length | 6.7mm |
| Model | PZT751T1G |
| Width | 3.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | -60V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -80V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 800mW |
| Maximum DC Collector Current Idc | -2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
| High Current | 2.0 Amp |
| Nexperia BCP55-10,115 Transistor, 1 A NPN, 60 V, 4-Pin SOT-223Brand | Nexperia |
onsemi PZT751T1G is a high current PNP bipolar transistor designed to deliver reliable performance in industrial and consumer electronic applications. This transistor is housed in a compact 4-pin SOT-223 surface mount package, ideal for medium power applications.
The device supports a maximum DC collector current of -2 A and a maximum collector emitter voltage of -60 V, making it suitable for robust switching and amplification tasks. The transistor exhibits a minimum DC current gain (hFE) of 40, ensuring effective gain performance.
Thermal management is optimized with the SOT-223 package, which allows improved thermal conduction due to its level mounting. This leads to better reliability and longevity of the transistor by dissipating up to 800 mW of power and operating safely at temperatures up to 150°C.
Other electrical limits include a maximum collector base voltage of -80 V, emitter base voltage up to -5 V, and transition frequency rated at 100 MHz. These parameters support stable operation under various conditions.
The SOT-223 package design facilitates soldering via wave or reflow processes and includes formed leads that absorb thermal stress, reducing the risk of die damage. The transistor meets the automotive-grade standard AEC-Q101, demonstrating suitability for automotive electronics and other demanding environments.
The compact sizing dimensions (Length: 6.7 mm, Width: 3.7 mm, Height: 1.75 mm) allow for efficient PCB layout and integration. The transistor supports a maximum collector current of -2 amps. Maximum collector emitter voltage is rated at -60 volts for robust operation.
SOT-223 package ensures improved thermal conduction and reliable mounting. Maximum power dissipation capability is 800 milliwatts. Maximum operating temperature reaches up to 150 degrees Celsius for durability. The device is certified to automotive standard AEC-Q101, ensuring high quality.
Features a minimum DC current gain (hFE) of 40 for efficient amplification. Designed as a single transistor with PNP polarity configuration. SOT-223 package dimension details: Length 6.7 mm, Width 3.7 mm, Height 1.75 mm.
Ideal for medium power surface mount applications using wave or reflow soldering methods. This transistor is manufactured in Malaysia and free from lead (Pb-Free) and halogens, supporting environmentally friendly electronics manufacturing.
It is suitable for applications in industrial electronics, power supply control, automotive circuits, and general-purpose switching and amplification tasks. Explore additional semiconductor and transistor options in the Bipolar Transistors category at EnvMart for your specialized industrial and electronic requirements.
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