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onsemi High Current PNP Bipolar Transistor, 2 A, -60 V, 4-Pin SOT-223 PZT751T1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin Malaysia
Brand onsemi
Height 1.75mm
Length 6.7mm
Model PZT751T1G
Width 3.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223
Pin Count 4
Maximum Collector Emitter Voltage Vceo -60V
Minimum DC Current Gain hFE 40
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 800mW
Maximum DC Collector Current Idc -2A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
High Current 2.0 Amp
Nexperia BCP55-10,115 Transistor, 1 A NPN, 60 V, 4-Pin SOT-223Brand Nexperia

Key Features

  • The transistor supports a maximum collector current of -2 amps.
  • Maximum collector emitter voltage is rated at -60 volts for robust operation.
  • SOT-223 package ensures improved thermal conduction and reliable mounting.
  • Maximum power dissipation capability is 800 milliwatts.
  • Maximum operating temperature reaches up to 150 degrees Celsius for durability.
  • The device is certified to automotive standard AEC-Q101, ensuring high quality.
  • Features a minimum DC current gain (hFE) of 40 for efficient amplification.
  • Designed as a single transistor with PNP polarity configuration.

Product Description

onsemi PZT751T1G is a high current PNP bipolar transistor designed to deliver reliable performance in industrial and consumer electronic applications. This transistor is housed in a compact 4-pin SOT-223 surface mount package, ideal for medium power applications.

The device supports a maximum DC collector current of -2 A and a maximum collector emitter voltage of -60 V, making it suitable for robust switching and amplification tasks. The transistor exhibits a minimum DC current gain (hFE) of 40, ensuring effective gain performance.

Thermal management is optimized with the SOT-223 package, which allows improved thermal conduction due to its level mounting. This leads to better reliability and longevity of the transistor by dissipating up to 800 mW of power and operating safely at temperatures up to 150°C.

Other electrical limits include a maximum collector base voltage of -80 V, emitter base voltage up to -5 V, and transition frequency rated at 100 MHz. These parameters support stable operation under various conditions.

The SOT-223 package design facilitates soldering via wave or reflow processes and includes formed leads that absorb thermal stress, reducing the risk of die damage. The transistor meets the automotive-grade standard AEC-Q101, demonstrating suitability for automotive electronics and other demanding environments.

The compact sizing dimensions (Length: 6.7 mm, Width: 3.7 mm, Height: 1.75 mm) allow for efficient PCB layout and integration. The transistor supports a maximum collector current of -2 amps. Maximum collector emitter voltage is rated at -60 volts for robust operation.

SOT-223 package ensures improved thermal conduction and reliable mounting. Maximum power dissipation capability is 800 milliwatts. Maximum operating temperature reaches up to 150 degrees Celsius for durability. The device is certified to automotive standard AEC-Q101, ensuring high quality.

Features a minimum DC current gain (hFE) of 40 for efficient amplification. Designed as a single transistor with PNP polarity configuration. SOT-223 package dimension details: Length 6.7 mm, Width 3.7 mm, Height 1.75 mm.

Ideal for medium power surface mount applications using wave or reflow soldering methods. This transistor is manufactured in Malaysia and free from lead (Pb-Free) and halogens, supporting environmentally friendly electronics manufacturing.

It is suitable for applications in industrial electronics, power supply control, automotive circuits, and general-purpose switching and amplification tasks. Explore additional semiconductor and transistor options in the Bipolar Transistors category at EnvMart for your specialized industrial and electronic requirements.

onsemi High Current PNP Bipolar Transistor, 2 A, -60 V, 4-Pin SOT-223 PZT751T1G
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Frequently Asked Questions

The maximum DC collector current rating of this model is -2 A.

This transistor supports a maximum collector-emitter voltage of -60 V.

The maximum power dissipation capability of this unit is 800 milliwatts.

The dimensions of the SOT-223 package are 6.7 mm in length, 3.7 mm in width, and 1.75 mm in height.

It features a minimum DC current gain (hFE) of 40, ensuring efficient amplification.

The maximum operating temperature for this transistor is 150 degrees Celsius.

This model is a single PNP bipolar transistor designed for medium power applications.

The PZT751T1G is certified to the automotive standard AEC-Q101.

The transition frequency for this unit is rated at 100 MHz.

The maximum collector-base voltage (VCBO) is rated at -80 V.

This transistor is designed for surface mount applications.

The PZT751T1G is manufactured in Malaysia.

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