STMicroelectronics MDmesh K5 SuperMESH5 N-Channel MOSFET, 3 A, 800 V Enhancement Mode, 3-Pin TO-220 STF4N80K5

STMicroelectronics STF4N80K5 MDmesh K5 SuperMESH5 N-Channel MOSFET is a high-voltage, high-current transistor designed for efficient power switching in electronic circuits. It comes in a durable 3-pin TO-220 package suitable for through-hole mounting, providing ease of integration into various power electronics systems.

This N-channel MOSFET features a maximum drain-source voltage rating of 800 V and can continuously handle a drain current of up to 3 A. With a low maximum drain-source resistance of 2.5 Ω, it enables efficient conduction and reduced power loss, making it suitable for switching applications where performance and thermal management are critical.

The device supports enhancement mode operation and has a typical gate charge of 10.5 nC at gate-source voltage, which allows for fast switching speeds and improved efficiency in switching regulators and motor drives. It operates reliably across a broad temperature range from -55°C to 150°C, which makes it viable for industrial, automotive, and commercial electronics.

Physical dimensions include a height of 16.4 mm, length of 10.4 mm, and width of 4.6 mm, allowing compact design layouts. The maximum gate-source voltage is rated at ±30 V, ensuring protection against voltage spikes. The forward voltage of 1.5 V supports its application in circuits with stringent voltage requirements.

This MOSFET is part of STMicroelectronics’ MDmesh K5, SuperMESH5 series, designed for robust performance in power management, industrial control systems, and consumer electronics. Its through-hole package facilitates easy assembly and reliable mechanical stability.

Operates at a maximum continuous drain current of 3 A and drain-source voltage of 800 V. Low drain-source resistance of 2.5 Ω reduces conduction losses. Enhancement mode N-channel MOSFET for efficient switching. Power dissipation capability up to 20 W supports demanding applications.

Wide operating temperature range from -55°C to 150°C. Compact TO-220 package with 3 pins for through-hole mounting. Typical gate charge of 10.5 nC ensures fast switching performance. Maximum gate-source voltage ±30 V protects against voltage spikes.

Physical dimensions are height 16.4 mm, length 10.4 mm, and width 4.6 mm.

Suitable for industrial, power management, laboratory, and electronic manufacturing applications. Find more products in the MOSFET category at EnvMart for reliable and high-performance semiconductor components.