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STMicroelectronics Power MOSFET Type P Channel, 12 A, 30 V, Enhancement Mode, Surface Mount, TO-252 Package STD26P3LLH6
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD26P3LLH6 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Type P channel MOSFET with enhancement mode operation.
- Low on-resistance of 45 milliohms ensures efficient current conduction.
- Typical gate charge of 12 nanocoulombs reduces switching losses.
- Maximum power dissipation of 40 watts allows for high power applications.
- TO-252 package enables compact surface mounting on PCBs.
- Operational temperature capability up to 175 degrees Celsius.
- Maximum gate-source voltage range of -20 to +20 volts.
- Forward voltage drop of 1.1 volts supports efficient switching.
Product Description
The STMicroelectronics STD26P3LLH6 Power MOSFET is a highly efficient P-channel device designed for power management in industrial, electronic, and power conversion applications. This 3-pin MOSFET utilizes the STripFET technology, offering ultra-low gate charge and low on-resistance to minimize power losses and improve switching efficiency.
With a maximum continuous drain current of 12 amperes and a maximum drain-source voltage of 30 volts, the STD26P3LLH6 is suitable for applications requiring reliable high-current switching within compact form factors. The enhancement mode channel ensures the MOSFET remains off at zero gate bias, adding safety during power cycling.
This device's TO-252 surface-mount package facilitates easy integration into printed circuit boards, saving space while providing good thermal dissipation. It supports a maximum power dissipation of 40 watts and can operate up to temperatures as high as 175°C, making it robust for industrial environments.
Type P channel MOSFET with enhancement mode operation. Low on-resistance of 45 milliohms for efficient conduction. Typical gate charge of 12 nanocoulombs minimizes switching power losses. Maximum power dissipation rating of 40 watts.
TO-252 surface mount package dimensions (6.6 mm x 6.2 mm x 2.4 mm). Operational temperature range up to 175°C supports harsh environments. Maximum gate-source voltage rating of -20 to +20 volts. Forward voltage drop of 1.1 volts ensuring high efficiency.
Designed for industrial and electronic power management applications.
This MOSFET is ideal for use in power supply modules, DC-DC converters, motor control circuits, and other applications requiring reliable and efficient power switching. Its compact package and thermal robustness make it suitable for demanding electronic assemblies.
Explore more STMicroelectronics semiconductor products in the Power MOSFET category on EnvMart for advanced electronic components.
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Frequently Asked Questions
The maximum continuous drain current for the STD26P3LLH6 is 12 amperes.
This model has a maximum drain-source voltage rating of 30 volts.
The on-resistance of the STD26P3LLH6 is 45 milliohms, ensuring efficient current conduction.
The typical gate charge for this model is 12 nanocoulombs, which helps to reduce switching losses.
The maximum power dissipation rating for the STD26P3LLH6 is 40 watts.
The dimensions of the TO-252 package are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
It can operate at temperatures up to 175 degrees Celsius.
The maximum gate-source voltage range is -20 to +20 volts.
This MOSFET is suitable for power supply modules, DC-DC converters, and motor control circuits.
The STD26P3LLH6 features a type P channel with enhancement mode operation.
The TO-252 package of this model has 3 pins.
This device utilizes STripFET technology, which offers ultra-low gate charge and low on-resistance.
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