onsemi Silicon Junction Switching Diode, Single, 200 mA, 2-Pin, 250 V, SOD-323 BAS21HT1G

onsemi BAS21HT1G Silicon Junction Switching Diode is a high-quality discrete semiconductor component designed for efficient switching applications in electronic devices. This diode is constructed as a single silicon junction type and is housed in a compact SOD-323 surface mount package facilitating easy implementation on printed circuit boards in a wide range of applications.

Its maximum forward current rating of 200 mA and peak repetitive reverse voltage of 250 V make it ideal for signal-switching tasks in consumer electronics, industrial controls, and telecommunications equipment. The diode exhibits a low forward voltage drop of 1.25 V, ensuring minimal power loss and efficient operation within circuits.

The device boasts a rapid peak reverse recovery time of 50 nanoseconds, which is essential for high-speed switching performance and reduced switching losses in power management and signal processing systems. Its peak non-repetitive forward surge current rating of 2.5 A allows it to safely handle transient currents without damage, increasing circuit robustness.

Operating over a temperature range from -55°C to 150°C, this diode maintains stable performance under varying environmental conditions, suitable for industrial and commercial electronic assemblies. The physical dimensions are minimal, with a length of 1.8 mm, width of 1.35 mm, and height of 1 mm, enabling compact design layouts.

This diode is manufactured in China and is part of the BAS21 series, ensuring consistency and reliability for engineering applications. It does not have specific automotive certifications but is well-suited for general-purpose switching uses.

The diode features a single silicon junction configuration optimized for switching. Its maximum forward current is 200 mA. Maximum peak reverse repetitive voltage is 250 V. Surface mount SOD-323 package with 2 pins facilitates PCB mounting.

Peak reverse recovery time is 50 ns for fast switching. Operating temperature from -55°C to 150°C ensures durability. Peak non-repetitive forward surge current rating of 2.5 A. Compact dimensions support small and lightweight circuits.

This onsemi diode is suitable for use in industrial electronics, power management, telecommunications, automotive circuits not requiring special certifications, and general switching diode applications. Suitable for designers and engineers seeking a reliable small-signal diode solution.

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