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STMicroelectronics STripFET N-Channel MOSFET 18 A 200 V Enhancement Mode TO-252 STD25NF20
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD25NF20 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.6V |
Key Features
- Supports surface mount technology with 3-pin TO-252 package.
- Enhancement mode with low 125 mΩ maximum drain source resistance.
- Maximum power dissipation of 110 W ensures effective heat handling.
- Typical gate charge is 28 nC at Vgs of 8 V, enabling fast switching.
- Operates over a temperature range of -55°C to 175°C for high reliability.
- Maximum gate source voltage rating of -20 V to +20 V provides operational robustness.
- Compliance with AEC-Q101 automotive standard defines quality benchmarks.
- Compact dimensions of 6.6 mm length, 6.2 mm width, and 2.4 mm height.
Product Description
STMicroelectronics STD25NF20 is a high-performance N-Channel STripFET MOSFET designed for power management and switching applications. It supports a continuous drain current of 18 A with a maximum drain source voltage of 200 V, making it suitable for demanding electronic environments.
This Enhancement mode transistor is housed in a compact TO-252 surface-mount package with 3 pins for ease of PCB integration. The device has a low maximum drain source resistance (Rds) of 125 mΩ which enhances efficiency in switching circuits.
The STD25NF20 delivers a maximum power dissipation of 110 W and typical gate charge of 28 nC at 8 V gate voltage, permitting rapid switching speeds, critical in power converters and motor drivers.
Rated for operation from -55°C to 175°C, it suits harsh industrial, automotive, and consumer electronic environments. It meets the AEC-Q101 automotive standard, ensuring reliability in automotive systems.
Supports surface mount technology with 3-pin TO-252 package. Enhancement mode with low 125 mΩ maximum drain source resistance. Maximum power dissipation of 110 W ensures effective heat handling. Typical gate charge is 28 nC at Vgs of 8 V, enabling fast switching.
Operates over a temperature range of -55°C to 175°C for high reliability. Maximum gate source voltage rating of -20 V to +20 V provides operational robustness. Compliance with AEC-Q101 automotive standard defines quality benchmarks.
Compact dimensions of 6.6 mm length, 6.2 mm width, and 2.4 mm height. Forward voltage of 1.6 V suitable for power applications. This transistor is ideal for industrial power supplies, automotive electronics, motor control, and general power switching devices where efficiency and reliability are key.
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Frequently Asked Questions
The maximum continuous drain current for this model is 18 A.
It has a maximum drain source voltage rating of 200 V.
The typical gate charge at a gate-source voltage of 8 V is 28 nC.
The maximum power dissipation is rated at 110 W.
The dimensions of the TO-252 package are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
The maximum drain source resistance (Rds) is 125 mΩ.
This model operates over a temperature range of -55°C to 175°C.
The maximum gate source voltage rating is -20 V to +20 V.
It complies with the AEC-Q101 automotive standard.
This model supports surface mount technology with a 3-pin configuration.
It is an N-channel MOSFET.
This MOSFET is suitable for power management and switching applications, including industrial power supplies and automotive electronics.
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