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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP18N60M2 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh M2 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 21.5nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.6V |
STMicroelectronics STP18N60M2 is an N-Channel MDmesh M2 series Power MOSFET designed to handle high voltage and current requirements with robust performance. It supports a continuous drain current of 13 A and a maximum drain-source voltage of 650 V. Housed in a 3-pin TO-220 package, this MOSFET is ideal for incorporation in power applications demanding reliability and efficiency.
The MDmesh M2 technology provides a low gate charge of 21.5 nC, enhancing switching speeds and reducing losses, making the device suitable for resonant-type switching supplies such as LLC converters. Its enhancement mode channel offers controlled operation with a gate source voltage range of -25 V to +25 V.
Operating temperatures range from -55°C to 150°C, offering durability in rigorous industrial and commercial environments. The power dissipation rating of 110 W underlines its capacity to manage substantial power without overheating, essential for power conversion and regulation tasks.
Compact physical dimensions including a height of 15.75 mm, length 10.4 mm, and width 4.6 mm in a TO-220 through hole mount package ease system design and thermal management. The forward voltage of 1.6 V supports efficient conduction minimizing energy losses.
The MOSFET features an enhancement mode channel for precise control. It supports a maximum continuous drain current of 13 A ideal for medium power circuits. The device withstands a maximum drain-source voltage of 650 V for high voltage applications.
Low gate charge ensures fast switching and high efficiency. Wide operating temperature range ensures robustness in various environments. TO-220 package supports through hole mounting for reliable mechanical stability. Compact size facilitates easy integration and thermal dissipation.
Maximum power dissipation rating of 110 W allows heavy load operation.
This MOSFET is suitable for industrial, power electronics, and manufacturing systems requiring efficient high voltage switching components. Its design targets applications in power supplies, DC/DC converters, and electronic control systems.
Explore more power semiconductor products like the STP18N60M2 in EnvMart’s Electronics category for discrete semiconductors and Power MOSFETs to support your industrial and commercial engineering projects.
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