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STMicroelectronics N-Channel MDmesh M2 Power MOSFET, 13 A, 650 V Enhancement, 3-Pin TO-220 STP18N60M2

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 15.75mm
Length 10.4mm
Model STP18N60M2
Width 4.6mm
Mount Type Through Hole
Series MDmesh M2
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 13A
Maximum Drain Source Voltage Vds 650V
Maximum Drain Source Resistance Rds 280mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 110W
Typical Gate Charge Qg @ Vgs 21.5nC
Maximum Gate Source Voltage Vgs -25, +25V
Forward Voltage Vf 1.6V

Key Features

  • The MOSFET features an enhancement mode channel for precise control.
  • It supports a maximum continuous drain current of 13 A ideal for medium power circuits.
  • The device withstands a maximum drain-source voltage of 650 V for high voltage applications.
  • Low gate charge ensures fast switching and high efficiency.
  • Wide operating temperature range ensures robustness in various environments.
  • TO-220 package supports through hole mounting for reliable mechanical stability.
  • Compact size facilitates easy integration and thermal dissipation.
  • Maximum power dissipation rating of 110 W allows heavy load operation.

Product Description

STMicroelectronics STP18N60M2 is an N-Channel MDmesh M2 series Power MOSFET designed to handle high voltage and current requirements with robust performance. It supports a continuous drain current of 13 A and a maximum drain-source voltage of 650 V. Housed in a 3-pin TO-220 package, this MOSFET is ideal for incorporation in power applications demanding reliability and efficiency.

The MDmesh M2 technology provides a low gate charge of 21.5 nC, enhancing switching speeds and reducing losses, making the device suitable for resonant-type switching supplies such as LLC converters. Its enhancement mode channel offers controlled operation with a gate source voltage range of -25 V to +25 V.

Operating temperatures range from -55°C to 150°C, offering durability in rigorous industrial and commercial environments. The power dissipation rating of 110 W underlines its capacity to manage substantial power without overheating, essential for power conversion and regulation tasks.

Compact physical dimensions including a height of 15.75 mm, length 10.4 mm, and width 4.6 mm in a TO-220 through hole mount package ease system design and thermal management. The forward voltage of 1.6 V supports efficient conduction minimizing energy losses.

The MOSFET features an enhancement mode channel for precise control. It supports a maximum continuous drain current of 13 A ideal for medium power circuits. The device withstands a maximum drain-source voltage of 650 V for high voltage applications.

Low gate charge ensures fast switching and high efficiency. Wide operating temperature range ensures robustness in various environments. TO-220 package supports through hole mounting for reliable mechanical stability. Compact size facilitates easy integration and thermal dissipation.

Maximum power dissipation rating of 110 W allows heavy load operation.

This MOSFET is suitable for industrial, power electronics, and manufacturing systems requiring efficient high voltage switching components. Its design targets applications in power supplies, DC/DC converters, and electronic control systems.

Explore more power semiconductor products like the STP18N60M2 in EnvMart’s Electronics category for discrete semiconductors and Power MOSFETs to support your industrial and commercial engineering projects.

STMicroelectronics N-Channel MDmesh M2 Power MOSFET, 13 A, 650 V Enhancement, 3-Pin TO-220 STP18N60M2
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Frequently Asked Questions

The maximum continuous drain current for the STP18N60M2 is 13 A.

This MOSFET can withstand a maximum drain-source voltage of 650 V.

The typical gate charge for this model is 21.5 nC at the specified gate-source voltage.

The operating temperature range for the STP18N60M2 is from -55°C to 150°C.

The dimensions of the TO-220 package are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.

The maximum power dissipation rating for the STP18N60M2 is 110 W.

This model features an N-channel type for its MOSFET design.

The pin count for this MOSFET is 3.

The TO-220 package supports through hole mounting.

The forward voltage for the STP18N60M2 is 1.6 V.

The maximum gate-source voltage for the STP18N60M2 is -25 V to +25 V.

This MOSFET belongs to the MDmesh M2 series.

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