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STMicroelectronics STripFET H7 N-Channel MOSFET, 90 A, 80 V Enhancement Mode, 3-Pin TO-220 Package STP140N8F7
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP140N8F7 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET H7 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 90A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 4.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 96nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
Key Features
- High continuous drain current rating of 90 A for demanding power applications.
- Maximum drain-source voltage of 80 V suitable for various switching applications.
- Low on-resistance of 4.3 milliohms for efficient conduction.
- Enhancement mode channel type ensuring reliable switching performance.
- Typical gate charge of 96 nC enabling fast switching speeds.
- Maximum power dissipation up to 200 W for robust thermal management.
- Wide operating temperature range from -55°C to 175°C.
- Designed for through-hole mounting with a compact TO-220 package.
Product Description
STMicroelectronics STP140N8F7 is a high-performance N-Channel STripFET™ H7 series MOSFET designed for power switching applications. It supports a maximum continuous drain current of 90 A and a maximum drain-source voltage of 80 V. Packaged in a compact and widely used 3-pin TO-220 form factor, it is optimized for through-hole mounting with excellent thermal dissipation capabilities and reliable operation under harsh electrical and thermal conditions.
This MOSFET features a very low drain-source resistance of 4.3 milliohms which minimizes conduction losses and improves energy efficiency in power management circuits. Its typical gate charge of 96 nanocoulombs enables fast switching, reducing switching losses and enhancing circuit responsiveness. The enhancement mode operation ensures a clean and efficient turn-on/off behavior, suitable for switching power devices, motor control, and other industrial electronics.
The device operates reliably over a wide temperature range from -55°C up to 175°C, allowing use in automotive, industrial, and commercial applications. With a maximum power dissipation of 200 watts, it can handle significant power loads while maintaining stable thermal performance. The forward voltage drop is 1.1 V, indicating efficient voltage conduction during operation.
The STP140N8F7 has dimensionally compact attributes with a height of 15.75 mm, length of 10.4 mm, and width of 4.6 mm, making it suitable for dense circuit board layouts. It is RoHS compliant and ideal for designing power supplies, motor drivers, and energy management systems in industrial, automotive, and lab environments.
High continuous drain current of 90 A supports robust power handling. Low on-resistance (4.3 mΩ) minimizes conduction losses. Wide thermal operating range from -55°C to 175°C for versatile applications. Compact TO-220 package ensures easy mounting and integration.
Enhancement mode operation for reliable switching characteristics. Suitable for industrial, automotive, and commercial electronics. High max power dissipation of 200 W for thermal robustness. Fast switching enabled by 96 nC gate charge.
Forward voltage drop of 1.1 V reduces power wastage. Optimized dimensions for compact circuit design. Explore more STMicroelectronics discrete semiconductor products and MOSFET solutions at EnvMart for reliable electronic component sourcing.
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Frequently Asked Questions
The STP140N8F7 has a maximum continuous drain current rating of 90 A, suitable for demanding power applications.
This MOSFET supports a maximum drain-source voltage of 80 V, making it suitable for various switching applications.
It features a low on-resistance of 4.3 milliohms, which helps minimize conduction losses and improve energy efficiency.
The typical gate charge is 96 nanocoulombs, enabling fast switching speeds and reducing switching losses.
The maximum power dissipation for the STP140N8F7 is up to 200 W, allowing for robust thermal management in applications.
It operates reliably over a wide temperature range from -55°C to 175°C, suitable for various environments.
This model has dimensions of 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width, making it compact for circuit designs.
The STP140N8F7 is designed for through-hole mounting, which facilitates easy integration into circuit boards.
It comes in a compact TO-220 package, which is widely used for its thermal dissipation capabilities.
This MOSFET features an N-channel type, optimized for enhancement mode operation, ensuring reliable switching performance.
The forward voltage drop is 1.1 V, which indicates efficient voltage conduction during operation.
The maximum gate-source voltage is -20 V to +20 V, providing flexibility in control signal levels.
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