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onsemi Small Signal PNP Transistor, 200 mA, 40 V, 3-Pin SOT-323 MMBT3906WT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1mm
Length 2.2mm
Model MMBT3906WT1G
Width 1.35mm
Mount Type Surface
Series MMBT3906W
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -40V
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -40V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 150mW
Maximum DC Collector Current Idc -200mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
Nexperia Transistor, -200 mA PNP, -40 V, 3-Pin SOT-323Brand Nexperia

Key Features

  • Maximum DC collector current of 200 mA provides efficient current handling.
  • Collector-emitter voltage rating of 40 V suitable for low voltage circuits.
  • Compact 3-pin SOT-323 surface mount package with dimensions 2.2 mm length and 1.35 mm width.
  • High transition frequency up to 100 MHz supports high-speed switching.
  • Operates in temperature range from -55°C to 150°C ensuring reliability in harsh environments.
  • Automotive standard compliant with AEC-Q101 ensuring durability and quality.
  • Minimum DC current gain (hFE) of 30 optimizes amplification performance.
  • Maximum power dissipation of 150 mW for efficient thermal management.

Product Description

onsemi MMBT3906WT1G is a small signal PNP transistor ideal for switching and amplification in electronic circuits. This transistor features a maximum DC collector current of 200 mA and a collector-emitter voltage rating of 40 V, making it suitable for a wide range of low power applications.

Encased in a compact 3-pin SOT-323 surface mount package, it measures 2.2 mm in length, 1.35 mm in width, and 1 mm in height, allowing for space-saving PCB layouts. The device supports a high transition frequency of up to 100 MHz, enabling fast switching capabilities.

Designed for reliable performance, the transistor operates across a broad temperature range from -55°C to 150°C, compliant with the automotive AEC-Q101 standard, ensuring suitability for automotive and industrial environments.

The MMBT3906WT1G offers a minimum DC current gain of 30 and maximum power dissipation of 150 mW, optimizing it for efficient signal amplification and thermal performance. It is configured as a single transistor with PNP polarity and surface mounting option.

Maximum DC collector current of 200 mA provides efficient current handling. Collector-emitter voltage rating of 40 V suitable for low voltage circuits. Compact 3-pin SOT-323 surface mount package with dimensions 2.2 mm length and 1.35 mm width.

High transition frequency up to 100 MHz supports high-speed switching. Operates in temperature range from -55°C to 150°C ensuring reliability in harsh environments. Automotive standard compliant with AEC-Q101 ensuring durability and quality.

Minimum DC current gain (hFE) of 30 optimizes amplification performance. Maximum power dissipation of 150 mW for efficient thermal management.

This transistor is widely used in industrial, automotive, electronic manufacturing, and consumer electronic applications where dependable PNP transistor performance is required. Its surface mount form factor allows for automatic PCB assembly improving production efficiency.

Discover more transistor and semiconductor products in the Electronics & Electricals category at EnvMart for your engineering and manufacturing needs.

Explore more products in our Bipolar Transistors category.

onsemi Small Signal PNP Transistor, 200 mA, 40 V, 3-Pin SOT-323 MMBT3906WT1G
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Frequently Asked Questions

The maximum DC collector current for this model is 200 mA, allowing for efficient current handling in various applications.

The collector-emitter voltage rating is 40 V, making it suitable for low voltage circuits.

The SOT-323 package measures 2.2 mm in length, 1.35 mm in width, and 1 mm in height, allowing for compact PCB layouts.

This transistor supports a high transition frequency of up to 100 MHz, enabling fast switching capabilities.

It operates in a temperature range from -55°C to 150°C, ensuring reliability in harsh environments.

Yes, it is compliant with the AEC-Q101 automotive standard, ensuring quality and durability for automotive applications.

The minimum DC current gain (hFE) is 30, which optimizes its amplification performance.

The maximum power dissipation is 150 mW, which aids in efficient thermal management.

It is a single PNP transistor, designed for switching and amplification in electronic circuits.

The maximum emitter-base voltage (VEBO) is -5 V, which is important for its operational limits.

This model has a pin count of 3, suitable for surface mounting applications.

The country of origin for this transistor is India.

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