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onsemi 6 A NPN Transistor 60 V 4-Pin SOT-223 Surface Mount NSV60601MZ4T1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.75mm
Length 6.7mm
Model NSV60601MZ4T1G
Width 3.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 50
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 100V dc
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 6A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Maximum DC collector current of 6 amperes for robust power handling.
  • Collector-emitter voltage rated at 60 volts ensuring voltage tolerance.
  • NPN transistor configuration suitable for switching and amplification.
  • Surface mount package SOT-223 with 4 pins for compact PCB design.
  • Minimum DC current gain (hFE) of 50 for effective current amplification.
  • Operating temperature range from -55°C to 150°C supports harsh environments.
  • Maximum power dissipation of 2 watts suitable for general purpose applications.
  • Maximum collector-base voltage 100 V DC for high voltage blocking capability.

Product Description

onsemi NSV60601MZ4T1G is a general purpose NPN bipolar transistor designed for power applications requiring up to 6 A collector current and 60 V collector-emitter voltage. Packaged in a compact 4-pin SOT-223 surface mount form factor, this transistor suits industrial and electronic equipment where space efficiency and reliability are crucial.

Key electrical characteristics include a minimum DC current gain (hFE) of 50 and maximum power dissipation of 2 W, allowing effective switching and amplification in moderate power circuits. The transistor supports a wide operating temperature range from -55°C to 150°C, making it suitable for automotive, industrial, and commercial electronics exposed to varied environmental conditions.

The device’s maximum collector-base voltage rating of 100 V DC and emitter-base voltage of 6 V further validate its robustness in demanding circuits. Its maximum switching frequency of 1 MHz enables versatile application in signal and power control.

Physical dimensions of 6.7 mm length, 3.7 mm width, and 1.75 mm height provide a compact footprint on printed circuit boards, facilitating high-density designs, especially in surface-mount assembly processes.

This transistor is ideal for use in industrial electronics, power supplies, motor drives, switching circuits, and other semiconductor-based control and amplification systems. The surface mount package type ensures ease of automated assembly and soldering compatibility.

Maximum DC collector current of 6 amperes for robust power handling. Collector-emitter voltage rated at 60 volts ensuring voltage tolerance. NPN transistor configuration suitable for switching and amplification. Surface mount package SOT-223 with 4 pins for compact PCB design.

Minimum DC current gain (hFE) of 50 for effective current amplification. Operating temperature range from -55°C to 150°C supports harsh environments. Maximum power dissipation of 2 watts suitable for general purpose applications.

Maximum collector-base voltage 100 V DC for high voltage blocking capability. Maximum transition frequency 1 MHz providing moderate speed switching. Dimensions of 6.7 mm length, 3.7 mm width, and 1.75 mm height for space-efficient mounting.

Explore more high-quality Bipolar Transistors and semiconductor solutions in the Electronics & Electricals section at EnvMart.

onsemi 6 A NPN Transistor 60 V 4-Pin SOT-223 Surface Mount NSV60601MZ4T1G
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Frequently Asked Questions

The maximum DC collector current for the NSV60601MZ4T1G is 6 amperes, allowing for robust power handling in various applications.

This model has a collector-emitter voltage rating of 60 volts, ensuring adequate voltage tolerance for power applications.

The minimum DC current gain (hFE) for the NSV60601MZ4T1G is 50, which facilitates effective current amplification.

It operates within a temperature range of -55°C to 150°C, making it suitable for harsh environmental conditions.

The dimensions of the SOT-223 package are 6.7 mm in length, 3.7 mm in width, and 1.75 mm in height, providing a compact footprint for PCB design.

The maximum power dissipation for the NSV60601MZ4T1G is 2 watts, suitable for general purpose applications.

The maximum collector-base voltage rating for this transistor is 100 V DC, providing high voltage blocking capability.

The maximum transition frequency for the NSV60601MZ4T1G is 1 MHz, enabling moderate speed switching applications.

It utilizes an NPN transistor configuration, which is suitable for both switching and amplification tasks.

The SOT-223 package of this transistor has 4 pins, facilitating its surface mount application.

The maximum emitter-base voltage (VEBO) for the NSV60601MZ4T1G is 6 V, which supports its operational integrity in circuits.

This model is ideal for use in industrial electronics, power supplies, motor drives, and switching circuits, among other semiconductor-based control and amplification systems.

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