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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.75mm |
| Length | 6.7mm |
| Model | NSV60601MZ4T1G |
| Width | 3.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 50 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 100V dc |
| Maximum Power Dissipation Pd | 2W |
| Maximum DC Collector Current Idc | 6A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
onsemi NSV60601MZ4T1G is a general purpose NPN bipolar transistor designed for power applications requiring up to 6 A collector current and 60 V collector-emitter voltage. Packaged in a compact 4-pin SOT-223 surface mount form factor, this transistor suits industrial and electronic equipment where space efficiency and reliability are crucial.
Key electrical characteristics include a minimum DC current gain (hFE) of 50 and maximum power dissipation of 2 W, allowing effective switching and amplification in moderate power circuits. The transistor supports a wide operating temperature range from -55°C to 150°C, making it suitable for automotive, industrial, and commercial electronics exposed to varied environmental conditions.
The device’s maximum collector-base voltage rating of 100 V DC and emitter-base voltage of 6 V further validate its robustness in demanding circuits. Its maximum switching frequency of 1 MHz enables versatile application in signal and power control.
Physical dimensions of 6.7 mm length, 3.7 mm width, and 1.75 mm height provide a compact footprint on printed circuit boards, facilitating high-density designs, especially in surface-mount assembly processes.
This transistor is ideal for use in industrial electronics, power supplies, motor drives, switching circuits, and other semiconductor-based control and amplification systems. The surface mount package type ensures ease of automated assembly and soldering compatibility.
Maximum DC collector current of 6 amperes for robust power handling. Collector-emitter voltage rated at 60 volts ensuring voltage tolerance. NPN transistor configuration suitable for switching and amplification. Surface mount package SOT-223 with 4 pins for compact PCB design.
Minimum DC current gain (hFE) of 50 for effective current amplification. Operating temperature range from -55°C to 150°C supports harsh environments. Maximum power dissipation of 2 watts suitable for general purpose applications.
Maximum collector-base voltage 100 V DC for high voltage blocking capability. Maximum transition frequency 1 MHz providing moderate speed switching. Dimensions of 6.7 mm length, 3.7 mm width, and 1.75 mm height for space-efficient mounting.
Explore more high-quality Bipolar Transistors and semiconductor solutions in the Electronics & Electricals section at EnvMart.
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