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STMicroelectronics STripFET H7 N-Channel MOSFET 180A 100V Enhancement Mode 3-Pin H2PAK STH310N10F7-2

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 4.8mm
Length 15.8mm
Model STH310N10F7-2
Width 10.4mm
Mount Type Surface
Series STripFET H7
Maximum Operating Temperature 175°C
Package Type H2PAK
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 180A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 2.3mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 315W
Typical Gate Charge Qg @ Vgs 180nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.5V

Key Features

  • Supports a maximum continuous drain current of 180 amperes.
  • Operates with a maximum drain-source voltage of 100 volts.
  • Packaged in a 3-pin H2PAK surface mount package for efficient mounting.
  • Features an enhancement mode channel with a low on-resistance of 2.3 milliohms.
  • Capable of dissipating up to 315 watts of power.
  • Designed to operate between temperatures of -55°C to 175°C.
  • Maximum gate-source voltage tolerance ranges from -20 to +20 volts.
  • Typical gate charge of 180 nanocoulombs ensures fast switching performance.

Product Description

STMicroelectronics STH310N10F7-2 is part of the advanced STripFET™ H7 series of N-Channel MOSFETs, providing superior electrical performance for applications demanding high current and voltage handling capabilities. This device supports a maximum continuous drain current of 180A and a drain-source voltage of 100V, making it suitable for power management and switching applications in industrial electronics.

The MOSFET features an enhancement mode channel with extremely low drain-source resistance of 2.3 milliohms, which reduces conduction losses and improves efficiency in high power circuits. Its robust power dissipation capability of 315W allows operation under demanding thermal conditions.

The component is housed in a 3-pin H2PAK package designed for surface mounting, enabling compact circuit layouts while maintaining excellent thermal performance. It is rated for an operating temperature range from -55°C to 175°C ensuring reliability in harsh environments.

Additional technical merits include a maximum gate-source voltage of -20 to +20V and typical gate charge of 180nC for efficient gate drive and switching speed. With compact dimensions (15.8 mm x 10.4 mm x 4.8 mm), the MOSFET fits well in space-constrained designs.

This STMicroelectronics STripFET H7 MOSFET is ideal for industrial, power management, automotive, and general-purpose electronic applications requiring high efficiency and reliability under heavy current loads and switching conditions.

Supports a maximum continuous drain current of 180 amperes. Operates with a maximum drain-source voltage of 100 volts. 3-pin H2PAK surface mount package for efficient mounting. Low on-resistance of 2.3 milliohms enhances performance.

Power dissipation capability of 315 watts. Operating temperature range from -55°C to 175°C. Maximum gate-source voltage ranges from -20 to +20 volts. Typical gate charge of 180 nanocoulombs for fast switching. Compact dimensions: 15.8 mm length, 10.4 mm width, 4.8 mm height.

Explore the full range of STMicroelectronics MOSFETs and related semiconductor devices at EnvMart for your electronic component needs.

STMicroelectronics STripFET H7 N-Channel MOSFET 180A 100V Enhancement Mode 3-Pin H2PAK STH310N10F7-2
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Frequently Asked Questions

The maximum continuous drain current for this model is 180 amperes.

It operates with a maximum drain-source voltage of 100 volts.

This model features a low on-resistance of 2.3 milliohms, enhancing its performance in high power circuits.

It is capable of dissipating up to 315 watts of power, allowing operation under demanding thermal conditions.

The dimensions of the H2PAK package are 15.8 mm in length, 10.4 mm in width, and 4.8 mm in height.

The operating temperature range is from -55°C to 175°C, ensuring reliability in harsh environments.

It has a typical gate charge of 180 nanocoulombs, which ensures fast switching performance.

The maximum gate-source voltage tolerance ranges from -20 to +20 volts.

This model has a pin count of 3, suitable for surface mounting applications.

It features an enhancement mode channel, which is designed for efficient operation in power management applications.

The country of origin for this MOSFET is India.

This model is part of the advanced STripFET H7 series of N-Channel MOSFETs.

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