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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.8mm |
| Length | 15.8mm |
| Model | STH310N10F7-2 |
| Width | 10.4mm |
| Mount Type | Surface |
| Series | STripFET H7 |
| Maximum Operating Temperature | 175°C |
| Package Type | H2PAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 2.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 315W |
| Typical Gate Charge Qg @ Vgs | 180nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
STMicroelectronics STH310N10F7-2 is part of the advanced STripFET™ H7 series of N-Channel MOSFETs, providing superior electrical performance for applications demanding high current and voltage handling capabilities. This device supports a maximum continuous drain current of 180A and a drain-source voltage of 100V, making it suitable for power management and switching applications in industrial electronics.
The MOSFET features an enhancement mode channel with extremely low drain-source resistance of 2.3 milliohms, which reduces conduction losses and improves efficiency in high power circuits. Its robust power dissipation capability of 315W allows operation under demanding thermal conditions.
The component is housed in a 3-pin H2PAK package designed for surface mounting, enabling compact circuit layouts while maintaining excellent thermal performance. It is rated for an operating temperature range from -55°C to 175°C ensuring reliability in harsh environments.
Additional technical merits include a maximum gate-source voltage of -20 to +20V and typical gate charge of 180nC for efficient gate drive and switching speed. With compact dimensions (15.8 mm x 10.4 mm x 4.8 mm), the MOSFET fits well in space-constrained designs.
This STMicroelectronics STripFET H7 MOSFET is ideal for industrial, power management, automotive, and general-purpose electronic applications requiring high efficiency and reliability under heavy current loads and switching conditions.
Supports a maximum continuous drain current of 180 amperes. Operates with a maximum drain-source voltage of 100 volts. 3-pin H2PAK surface mount package for efficient mounting. Low on-resistance of 2.3 milliohms enhances performance.
Power dissipation capability of 315 watts. Operating temperature range from -55°C to 175°C. Maximum gate-source voltage ranges from -20 to +20 volts. Typical gate charge of 180 nanocoulombs for fast switching. Compact dimensions: 15.8 mm length, 10.4 mm width, 4.8 mm height.
Explore the full range of STMicroelectronics MOSFETs and related semiconductor devices at EnvMart for your electronic component needs.
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