STMicroelectronics STripFET H7 N-Channel MOSFET, 45 A, 100 V Enhancement Mode, 3-Pin TO-220 STF100N10F7

STMicroelectronics STF100N10F7 is a high-performance N-Channel STripFET™ H7 MOSFET designed for power switching applications requiring high current and voltage ratings. This device is packaged in a 3-pin TO-220 through-hole format, optimized for ease of mounting and effective heat dissipation in industrial, consumer electronics, and automotive circuits.

With a continuous drain current of 45 A and a maximum drain-source voltage of 100 V, the STF100N10F7 is suitable for load switching, DC-DC converters, and motor drivers. The enhancement mode operation provides a low on-resistance Rds(on) of only 8 milliohms, minimizing conduction losses and improving energy efficiency in power electronics systems.

Its ultra-low typical gate charge of 61 nC at Vgs enables high-speed switching, ideal for high-frequency applications and reducing switching losses.

The MOSFET reliably handles power dissipation up to 30 W, and its broad operating temperature range from −55°C up to 175°C ensures stable function in demanding industrial and automotive environments.

Its typical forward voltage of 1.2 V supports efficient conduction, and the device is designed with a maximum gate-source voltage tolerance of −20 V to +20 V to accommodate various gate driving schemes.

Compact physical measurements (length 10.4 mm, width 4.6 mm, height 16.4 mm) make integration in space-constrained circuit boards straightforward, while the 3-pin design simplifies electrical connections for diverse power electronics applications.

The MOSFET operates in enhancement mode for efficient switching performance. Maximum power dissipation is 30 watts for reliable thermal management. Features ultra-low gate charge of 61 nC at gate-source voltage, minimizing switching losses.

Maximum drain-source resistance of 8 milliohms reduces conduction losses effectively. Wide operating temperature range from −55°C to 175°C supports harsh environments. Designed with typical forward voltage of 1.2 V ensuring low conduction drop.

Mount type is through-hole, suitable for various PCB assembly requirements. Compact dimensions: length 10.4 mm, width 4.6 mm, and height 16.4 mm provide space-efficient design integration. Pin count is 3 pins, simplifying connection and installation in circuits.

Maximum gate-source voltage range ±20 V allows robust gate drive capability.

This MOSFET is extensively used in industrial, electronic component manufacturing, power management, and HVAC systems where reliable and efficient power switching is critical. It supports applications involving DC motors, power converters, and various electronic loads requiring high current capabilities.

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