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STMicroelectronics MDmesh M5 N-Channel MOSFET, 58 A, 710 V Enhancement, 3-Pin TO-3PF STFW69N65M5
Specifications
| Country of Origin | Korea |
|---|---|
| Brand | STMicroelectronics |
| Height | 26.7mm |
| Length | 15.7mm |
| Model | STFW69N65M5 |
| Width | 5.7mm |
| Mount Type | Through Hole |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-3PF |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 58A |
| Maximum Drain Source Voltage Vds | 710V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 79W |
| Typical Gate Charge Qg @ Vgs | 143nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- Maximum continuous drain current of 58 A ensures robust power handling.
- Maximum drain-source voltage rated at 710 V for durable operation.
- Utilizes a 3-pin TO-3PF package optimized for through-hole mounting.
- Features low on-state losses combined with low gate charge for energy efficiency.
- Operates reliably within a temperature range from -55°C to 150°C.
- Typical gate charge is 143 nC at Vgs for fast switching performance.
- Maximum power dissipation of 79 W supports demanding power applications.
- Designed for compact and reliable hard switching in solar power converters and electronic lighting controls.
Product Description
STMicroelectronics STFW69N65M5 is a high-performance N-Channel Power MOSFET from the MDmesh M5 series. It features a 58 A maximum continuous drain current and a maximum drain-source voltage of 710 V, housed in a compact 3-pin TO-3PF package designed for through-hole mounting. This device is optimized for applications requiring efficient energy management, such as power factor correction (PFC) and pulse-width modulation (PWM) topologies.
The MDmesh M5 series MOSFET offers low on-state resistance of 45 mΩ and low gate charge (Qg of 143 nC at Vgs), reducing power losses and improving switching speed. It supports operation over a wide temperature range from -55°C to 150°C, making it suitable for harsh industrial environments. The maximum power dissipation rating of 79 W enables handling of significant power loads reliably.
The enhancement mode channel and a forward voltage of 1.5 V make this transistor ideal for energy-conscious, compact, and reliable hard switching applications including solar power converters, electronic lighting controls, and power supplies for consumer products.
Robust 58 A continuous drain current rating. High voltage tolerance up to 710 V drain-source. Low on-state resistance and gate charge for improved efficiency. Reliable operation across industrial temperature ranges. Compact TO-3PF 3-pin package for through-hole mounting.
Suitable for power supply and renewable energy applications. Durable construction and Korean Republic country of origin.
This MOSFET represents STMicroelectronics' commitment to providing industrial-grade power semiconductor solutions optimized for performance and energy efficiency. Explore more discrete semiconductor components in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 58 A.
This MOSFET has a maximum drain-source voltage rating of 710 V.
It comes in a 3-pin TO-3PF package designed for through-hole mounting.
The typical gate charge is 143 nC at Vgs.
The maximum power dissipation is rated at 79 W.
It operates reliably within a temperature range from -55°C to 150°C.
The maximum drain-source resistance is 45 mΩ.
It is suitable for applications such as solar power converters and electronic lighting controls.
The forward voltage is specified at 1.5 V.
The maximum gate-source voltage is rated at -25V to +25V.
The dimensions are 26.7 mm in height, 15.7 mm in length, and 5.7 mm in width.
This model belongs to the MDmesh M5 series.
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