Nexperia Isolated Trench Dual N-Channel Enhancement Mode MOSFET 6-Pin SC-88 60 V 300 mA 2N7002BKS,115

Nexperia 2N7002BKS,115 Isolated Trench MOSFET is a dual N-channel enhancement-mode transistor designed for surface-mount applications in electronics and power circuits. It supports a maximum continuous drain current of 300 mA and a maximum drain-source voltage of 60 V, making it an efficient component for switching and amplification in low to moderate power designs.

The device is packaged in a 6-pin SC-88 surface-mount package with dimensions 2.2 mm length, 1.35 mm width, and 1 mm height, suitable for compact PCB layouts. It features a low typical gate charge of 0.5 nC at Vgs, which allows fast switching and improved efficiency in high-frequency circuits.

Designed with an isolated transistor configuration integrating two N-Channel MOSFET elements per chip, this device is ideal for applications requiring dual switching elements on one footprint. The enhancement mode ensures the transistor remains off at zero gate voltage enhancing safety and control.

Operating temperature range is from -55°C to +150°C, supporting reliable performance in industrial, automotive, and harsh environment applications. The component complies with the automotive AEC-Q101 standard ensuring quality and robustness in vehicle electronics.

Typical applications include power management, signal switching, load switching in automotive systems, industrial control circuits, and consumer electronic devices. Its compact packaging and electrical characteristics make it suitable for dense electronic assemblies in laboratory, manufacturing, and commercial environments.

This MOSFET features a maximum continuous drain current of 300 mA, suitable for low power switching. Maximum drain-source voltage is rated at 60 V, supporting moderate voltage applications. Compact 6-pin SC-88 package for efficient PCB space utilization.

Low gate charge value enables fast switching performance. Wide operating temperature range from -55°C to +150°C ensures durability. Dual N-Channel elements integrated per chip enhance circuit versatility. Power dissipation capability of 445 mW supports efficient thermal management.

Compliance with automotive AEC-Q101 standard for high reliability in automotive electronics. Explore more semiconductor components and MOSFET options in EnvMart to optimize your electronics design workflow with quality products from trusted brands like Nexperia.