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onsemi Silicon Junction Switching Diode 2 A 2-Pin DO-214AC MURA220T3G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.05mm |
| Length | 4.57mm |
| Model | MURA220T3G |
| Width | 2.92mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-214AC |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 40A |
| Maximum Forward Voltage Vf | 950mV |
| Peak Reverse Recovery Time trr | 35ns |
| Maximum Forward Current If | 2A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 200V |
Key Features
- The diode features a maximum peak reverse repetitive voltage of 200 V.
- It has a maximum forward voltage of 950 mV suitable for efficient rectification.
- Peak reverse recovery time is 35 ns, ensuring rapid switching performance.
- Designed for surface mount applications with a compact DO-214AC package.
- Operating temperature range from -65°C to 175°C supports robust reliability.
- Pin count of 2 optimized for straightforward circuit integration.
- Peak non-repetitive forward surge current capability of 40 A for transient protection.
- Contains no automotive standard certification but meets general semiconductor requirements.
Product Description
onsemi MURA220T3G is a silicon junction switching diode designed for surface mount electronic applications requiring a compact and reliable rectifier solution.
This diode supports a maximum forward current of 2 A and a peak reverse repetitive voltage rating of 200 V, making it suitable for moderate power switching and rectification tasks in electronic equipment, industrial controls, and power supply modules.
The device's fast switching capability, with a peak reverse recovery time of 35 ns, allows efficient performance in high-frequency circuits, enhancing device responsiveness and reducing switching losses.
Housed in a DO-214AC surface mount package with dimensions 4.57 mm length, 2.92 mm width, and 2.05 mm height, the diode is optimized for automated PCB assembly processes. Operating over a wide temperature range from -65°C up to 175°C, this diode offers durability in harsh industrial, commercial, and consumer electronics environments.
Additional technical highlights include a maximum forward voltage of 950 mV ensuring effective conduction, a peak non-repetitive forward surge current rating of 40 A enabling protection against transient surges, and standardized pin count of 2 for circuit simplicity.
The diode's 2 A forward current rating accommodates a variety of moderate load applications. Fast 35 ns recovery time supports efficiency in switching power supplies and signal circuits. Compact DO-214AC surface mount package facilitates high-density board designs.
Wide operating temperature range ensures reliability in automotive and industrial electronics. High surge current capacity allows transient protection and robust operation. This diode is ideal for use in industrial electronics, power management systems, telecommunications equipment, and general semiconductor applications.
Explore onsemi products and other Switching Diodes categories at EnvMart for detailed component selection and technical support.
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Frequently Asked Questions
The maximum forward current rating of this diode is 2 A.
It has a peak reverse repetitive voltage rating of 200 V.
This model is housed in a DO-214AC surface mount package.
The dimensions are 4.57 mm in length, 2.92 mm in width, and 2.05 mm in height.
The peak reverse recovery time is 35 ns, which supports rapid switching performance.
It operates within a temperature range from -65°C to 175°C.
The maximum forward voltage is 950 mV, suitable for efficient rectification.
The diode can handle a peak non-repetitive forward surge current of 40 A.
This diode has a pin count of 2, optimized for straightforward circuit integration.
It is designed for surface mount applications in electronic equipment, industrial controls, and power supply modules.
It does not contain automotive standard certification but meets general semiconductor requirements.
The country of origin for this diode is India.
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