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onsemi General Purpose PNP Bipolar Transistor, -3 A Collector Current, -80 V Collector-Emitter Voltage, 12.5 W Power MJE172G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 27.73mm
Length 7.8mm
Model MJE172G
Width 3mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-225
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -80V
Minimum DC Current Gain hFE 50
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 100V
Maximum Power Dissipation Pd 12.5W
Maximum DC Collector Current Idc -3A
Transistor Configuration Single
Maximum Transition Frequency ft 10MHz

Key Features

  • The transistor offers a maximum power dissipation of 12.5 watts.
  • It has a minimum DC current gain (hFE) of 50 for reliable amplification.
  • Operating temperature ranges from -65°C to 150°C ensuring versatile environmental tolerance.
  • The device provides a maximum transition frequency of 10 MHz, suitable for moderate frequency applications.
  • Pin count is 3, in a compact TO-225 form factor that is easy to mount.
  • Maximum collector-base voltage is 100 V and maximum emitter-base voltage is 7 V.

Product Description

onsemi MJE172G is a robust general purpose PNP bipolar transistor designed for applications requiring a maximum collector current of -3 amperes and collector-emitter voltage of -80 volts. Packaged in a TO-225 format with through-hole mounting, this transistor is ideal for industrial, automotive, and consumer electronics requiring reliable switching and amplification.

The device supports a maximum power dissipation of 12.5 watts, allowing stable operation under moderate load conditions. With a minimum DC current gain (hFE) of 50, it ensures efficient signal amplification and switching performance. The transistor also operates across a wide temperature range from -65°C to 150°C, making it suited for harsh working environments.

A maximum transition frequency of 10 MHz makes it fit for low to medium frequency electronic circuits. The 3-pin arrangement facilitates straightforward connection in circuit designs. Electrical maximum ratings such as a 100 V collector-base voltage and 7 V emitter-base voltage highlight its capability to handle substantial voltage loads.

Physically, the transistor measures 27.73 mm in height, 7.8 mm in length, and 3 mm in width, providing compactness and ease of integration. It is not automotive standard certified and has no specific approvals but is suited for general power electronics tasks.

The transistor’s 12.5 W power rating supports moderate power circuits. Its temperature rating from -65°C to 150°C ensures reliable operation across environments. The TO-225 package and through-hole mount type ease installation in various electronics.

Pin count of 3 aligns with standard bipolar transistor configurations. Maximum voltage ratings (Vceo, VCBO, VEBO) provide safe operating limits. Compact dimensions allow versatile mounting in assemblies.

This transistor finds use in electronic components, power connectors, semiconductor devices, and discrete transistors for industrial, laboratory, manufacturing, and automotive applications; suitable for signal processing, switching, and amplification tasks.

Explore our selection of Bipolar Transistors to find compatible and complementary components for your electronic design projects on EnvMart.

onsemi General Purpose PNP Bipolar Transistor, -3 A Collector Current, -80 V Collector-Emitter Voltage, 12.5 W Power MJE172G
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Frequently Asked Questions

The maximum collector current for this model is -3 amperes.

It has a maximum power dissipation rating of 12.5 watts.

The operating temperature range for the MJE172G is from -65°C to 150°C.

The maximum collector-emitter voltage (Vceo) is -80 volts.

The maximum transition frequency for this transistor is 10 MHz.

This model features a pin count of 3.

The transistor is packaged in a TO-225 format.

It supports through-hole mounting.

The minimum DC current gain (hFE) is 50.

The maximum emitter-base voltage (VEBO) is 7 volts.

The transistor measures 27.73 mm in height, 7.8 mm in length, and 3 mm in width.

This transistor is suitable for industrial, automotive, and consumer electronics applications requiring reliable switching and amplification.

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