onsemi General Purpose PNP Bipolar Transistor, 3 A Max Collector Current, 80 V Max Collector-Emitter Voltage, 12.5 W MJE172G

onsemi MJE172G is a general-purpose PNP bipolar transistor designed for use in discrete semiconductor applications. It supports a maximum DC collector current of 3 A and can withstand a maximum collector-emitter voltage of 80 V. The device comes in a standard 3-pin TO-225 package suitable for through-hole mounting on printed circuit boards.

This transistor is ideal for switching and amplification tasks in industrial, electronics manufacturing, and power regulation applications where reliable performance is required over a broad temperature range from -65°C to 150°C. Its maximum power dissipation of 12.5 W allows it to handle moderate levels of power without thermal failure.

The MJE172G provides stable operation with a minimum DC current gain (hFE) of 50 and a maximum transition frequency of 10 MHz, making it suitable for moderate frequency switching tasks. The device can tolerate a maximum collector-base voltage (VCBO) of 100 V and a maximum emitter-base voltage of 7 V.

The transistor’s physical dimensions include a height of 27.73 mm, a length of 7.8 mm, and a width of 3 mm, providing a compact form factor for PCB assemblies. It meets no specific automotive or industry standard approvals, ensuring suitability mainly for general-purpose electronic circuits.

Applications for this MJE172G transistor include industrial equipment control, general-purpose amplification, and moderate power switching circuits in laboratory and commercial electronics systems. It is a reliable component for designers requiring robust performance in through-hole electronic assemblies.

Designed for general-purpose switching and amplification applications. Maximum power dissipation of 12.5 watts supports moderate power loads. Through-hole mount type with robust 3-pin TO-225 package for easy PCB integration.

Reliable performance with maximum operating temperature up to 150°C. Low minimum DC current gain of 50 suited for stable circuit operation. Maximum transition frequency of 10 MHz for moderate speed switching. Wide operating temperature range from -65°C to 150°C for industrial environments.

High maximum collector-base voltage of 100 V ensuring voltage tolerance. Explore more semiconductor and transistor options in the Electronics & Electricals category on EnvMart.

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