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| Country of Origin | China |
|---|---|
| Diameter | 5.3mm |
| Brand | onsemi |
| Height | 9.5mm |
| Length | 9.5mm |
| Model | 1N5408G |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-201AD |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A |
| Maximum Forward Voltage Vf | 1V |
| Maximum Forward Current If | 3A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 1kV |
onsemi 1N5408G is a Silicon Junction Switching Diode designed for electronic and power semiconductor applications requiring a maximum forward current of 3 A with a peak reverse voltage rating of 1 kV. Housed in a 2-pin DO-201AD through-hole package, this diode offers a reliable rectification solution for industrial and electronic circuits.
The diode's construction enables stable operation in harsh environments with an operating temperature range from -65°C to 150°C, making it suitable for a variety of industrial, laboratory, manufacturing, and power electronics environments. The device supports a peak non-repetitive forward surge current of 200 A, offering robustness during transient loads.
Dimensions of approximately 9.5 mm length and 5.3 mm diameter facilitate easy integration into circuit designs. The maximum forward voltage drop of 1 V ensures energy efficient conduction, which is critical in power-sensitive applications.
This single silicon junction diode from onsemi is manufactured in China adhering to standard electronic component quality controls. It does not carry automotive certifications but is optimized for general electronic component and power rectification use cases in industrial settings.
This diode is designed for through-hole mounting applications. The package dimensions are approximately 9.5 mm length and 5.3 mm diameter. It operates reliably between -65°C and 150°C temperature range. Peak non-repetitive forward surge current rating is 200 A.
The diode has a maximum forward voltage drop of 1 V to ensure efficient conduction. This device is supplied as a single silicon junction diode suitable for rectification purposes. It is manufactured in China following standard industrial quality requirements.
No automotive standard certification applies to this model.
Ideal for industrial, electronic manufacturing, power distribution, and laboratory applications, the onsemi 1N5408G diode offers dependable performance and ease of use. Explore more products in the Switching Diodes category at EnvMart for your semiconductor component needs.
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