onsemi Single N-Channel JFET-Channel JFET 25 V 24 to 60 mA 3-Pin SOT-23 MMBFJ310LT3G

onsemi MMBFJ310LT3G is a Single N-Channel JFET transistor designed for electronics and semiconductor applications requiring precise control over current flow.

This junction field-effect transistor features a maximum drain-source voltage of 25 V and can handle drain currents ranging from 24 to 60 mA, offering flexibility in low-power electronics design.

Housed in a compact 3-pin SOT-23 surface mount package, it enables high-density PCB layouts and is suitable for compact industrial, commercial, and laboratory electronic equipment.

The maximum power dissipation of 225 mW allows reliable operation under typical electrical loads, while its minimum operating temperature of -55°C and maximum operating temperature of 150°C ensure stable performance in diverse environmental conditions.

The gate-source voltage rating up to 25 V further enhances its utility in switching and amplification applications within the semiconductor device class. This component does not comply with automotive industry standards but is ideal for general electronic circuit applications in industrial, instrumentation, and research settings.

This device is configured as a single N-channel JFET transistor. Maximum drain-source voltage rating of 25 V. Supports drain-source current from 24 to 60 mA. Compact 3-pin SOT-23 surface mount package. Maximum power dissipation at 225 mW.

Wide operating temperature range from -55°C to 150°C. Maximum gate-source voltage of 25 V. Dimensions: 3.04 mm length × 1.4 mm width × 1.01 mm height.

For electronics engineers and designers, the onsemi MMBFJ310LT3G offers reliable discrete transistor functionality suited for control, switching, and amplification tasks across diverse industrial and laboratory applications.

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