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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 7.3mm |
| Length | 6.7mm |
| Model | BCP56T3G |
| Width | 1.75mm |
| Mount Type | Surface |
| Series | BCP56 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 (SC-73) |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 100V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 1.5W |
| Maximum DC Collector Current Idc | 1A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 35MHz |
| onsemi NSV40301MZ4G NPN Transistor, 3 A, 40 V, 3 + Tab-Pin SOT-223Brand | ON Semiconductor |
onsemi BCP56T3G is a general purpose NPN bipolar transistor designed for use in electronic and power applications. It supports a maximum DC collector current of 1 A and a collector emitter voltage up to 80 V, making it suitable for various amplification and switching operations.
This transistor is housed in a compact 3-pin SOT-223 surface mount package, facilitating easy PCB mounting and integration into compact designs. Its power dissipation rating of 1.5 W allows it to manage moderate power loads efficiently.
The device operates reliably across a wide temperature range from -65°C to 150°C. It features a maximum transition frequency of 35 MHz, enabling performance in moderately high-frequency circuits. The minimum DC current gain of 40 ensures effective signal amplification.
Key attributes like its NPN polarity and single transistor configuration allow versatile use across industrial, automotive, manufacturing, and electronic circuit applications. Significantly, this transistor complies with the automotive quality standard AEC-Q101, certifying its suitability in automotive electronic systems demanding reliability and durability.
This transistor has a 3-pin SOT-223 surface mount package. Maximum collector current of 1 A and collector emitter voltage of 80 V. Power dissipation capacity of 1.5 W for moderate power applications. Operating temperature range from -65°C to 150°C.
Transition frequency up to 35 MHz for switching and amplification. Minimum DC current gain (hFE) of 40 for improved amplification. NPN transistor polarity with single configuration. Meets automotive AEC-Q101 reliability standards.
Compact dimensions: Height 7.3 mm, Length 6.7 mm, Width 1.75 mm.
This transistor is widely used in industrial electronic circuits, automotive electronics, manufacturing devices, and general-purpose semiconductor applications. Explore more onsemi products and Bipolar Transistors on EnvMart for your electronics design and manufacturing needs.
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